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IC42S16100E-6TL 参数 Datasheet PDF下载

IC42S16100E-6TL图片预览
型号: IC42S16100E-6TL
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 81 页 / 1082 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS42S16100E, IC42S16100E  
Precharge  
Read Cycle Interruption  
The precharge command sets the bank selected by  
pin A11 to the precharged state. This command can be  
executed at a time tr a s following the execution of an active  
command to the same bank. The selected bank goes to  
the idle state at a time tr p following the execution of the  
precharge command, and an active command can be  
executed again for that bank.  
Using the Precharge Command  
A read cycle can be interrupted by the execution of the  
precharge command before that cycle completes. The  
delay time (tr q l ) from the execution of the precharge  
command to the completion of the burst output is the  
clock cycle of CAS latency.  
If pinA10 is low when this command is executed, the bank  
selected by pin A11 will be precharged, and if pin A10 is  
HIGH, both banks will be precharged at the same time.  
This input to pin A11 is ignored in the latter case.  
CAS Latency  
3
2
tr q l  
3
2
CLK  
tRQL  
PRE 0  
COMMAND  
DQ  
READ A0  
DOUT A0  
DOUT A1  
DOUT A2  
HI-Z  
READ (CA=A, BANK 0)  
PRECHARGE (BANK 0)  
CAS latency = 2, burstlength = 4  
CLK  
t
RQL  
PRE 0  
COMMAND  
DQ  
READ A0  
DOUT A0  
DOUT A1  
DOUT A2  
HI-Z  
READ (CA=A, BANK 0)  
PRECHARGE (BANK 0)  
CAS latency = 3, burstlength = 4  
Integrated Silicon Solution, Inc. — www.issi.com  
31  
Rev. C  
01/22/08  
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