IS42S16100E, IC42S16100E
Write With Auto-Precharge
The write with auto-precharge command first executes a
burst write operation and then puts the selected bank in
the precharged state automatically. After the precharge
completes the bank goes to the idle state. Thus this
command performs a write command and a precharge
command in a single operation.
Therefore, the selected bank can be made active after a
delay of td a l .
The selected bank must be set to the active state before
executing this command.
The auto-precharge function is invalid if the burst length
is set to full page.
During this operation, the delay period (td a l ) between the
last burst data input and the completion of the precharge
operation differs depending on the CAS latency setting.
The delay (td a l ) is tr p plus one CLK period. That is, the
precharge operation starts one clock period after the last
burst data input.
CAS Latency
3
2
td a l
2CLK
2CLK
+tr p
+tr p
CLK
COMMAND
DQ
WRITE A0
ACT 0
PRECHARGE START
DIN
0
D
IN
1
D
IN
2
DIN 3
tRP
tDAL
WRITE WITH AUTO-PRECHARGE
(BANK 0)
CAS latency = 2, burstlength = 4
CLK
ACT 0
COMMAND
DQ
WRITE A0
PRECHARGE START
DIN
0
D
IN
1
D
IN
2
DIN 3
tRP
WRITE WITH AUTO-PRECHARGE
(BANK 0)
tDAL
CAS latency = 3, burstlength = 4
Integrated Silicon Solution, Inc. — www.issi.com
27
Rev. C
01/22/08
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
