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IC42S16100E-6TL 参数 Datasheet PDF下载

IC42S16100E-6TL图片预览
型号: IC42S16100E-6TL
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 81 页 / 1082 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS42S16100E, IC42S16100E  
Read Cycle (Full Page) Interruption Using  
the Burst Stop Command  
The IS42S16100E/IC42S16100E can output data  
continuously from the burst start address (a) to location  
a+255 during a read cycle in which the burst length is set  
to full page. The IS42S16100E/IC42S16100E repeats the  
operation starting at the 256th cycle with the data output  
returning to location (a) and continuing with a+1, a+2, a+3,  
etc. Aburst stop command must be executed to terminate  
this cycle.Aprecharge command must be executed within  
theACT to PRE command period (tr a s max.) following the  
burst stop command.  
After the period (tr b d ) required for burst data output to  
stop following the execution of the burst stop command  
has elapsed, the outputs go to the HIGH impedance  
state. This period (tr b d ) is two clock cycle when the  
CAS latency is two and three clock cycle when the CAS  
latency is three.  
CAS Latency  
3
2
tr b d  
3
2
CLK  
tRBD  
BST  
COMMAND  
DQ  
READ A0  
D
OUT A0  
DOUT A0  
D
OUT A1  
D
OUT A2  
DOUT A3  
HI-Z  
BURST STOP  
READ (CA=A, BANK 0)  
CAS latency = 2, burstlength = 4  
CLK  
t
RBD  
BST  
COMMAND  
DQ  
READ A0  
D
OUT A0  
D
OUT A0  
D
OUT A2  
D
OUT A3  
D
OUT A1  
HI-Z  
READ (CA=A, BANK 0)  
BURST STOP  
CAS latency = 3, burstlength = 4  
Integrated Silicon Solution, Inc. — www.issi.com  
33  
Rev. C  
01/22/08  
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