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IC42S16100E-6TL 参数 Datasheet PDF下载

IC42S16100E-6TL图片预览
型号: IC42S16100E-6TL
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 81 页 / 1082 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS42S16100E, IC42S16100E  
Read With Auto-Precharge  
The read with auto-precharge command first executes a  
burst read operation and then puts the selected bank in  
the precharged state automatically. After the precharge  
completes, the bank goes to the idle state. Thus this  
command performs a read command and a precharge  
command in a single operation.  
three, the precharge operation starts on two clock cycles  
before the last burst data is output (tp q l = –2). Therefore,  
the selected bank can be made active after a delay of tr p  
from the start position of this precharge operation.  
The selected bank must be set to the active state before  
executing this command.  
During this operation, the delay period (tp q l ) between the  
last burst data output and the start of the precharge opera-  
tion differs depending on the CAS latency setting.  
The auto-precharge function is invalid if the burst length  
is set to full page.  
WhentheCASlatencysettingistwo, theprechargeopera-  
tion starts on one clock cycle before the last burst data is  
output (tp q l = –1). When the CAS latency setting is  
CAS Latency  
3
2
tp q l  
–2  
–1  
CLK  
COMMAND  
DQ  
READA 0  
ACT 0  
t
PQL  
DOUT  
0
D
OUT  
1
D
OUT DOUT 3  
2
tRP  
PRECHARGE START  
READ WITH AUTO-PRECHARGE  
(BANK 0)  
CAS latency = 2, burstlength = 4  
CLK  
COMMAND  
DQ  
ACT 0  
READA 0  
t
PQL  
DOUT  
0
D
OUT  
1
D
OUT  
2
DOUT 3  
t
RP  
READ WITH AUTO-PRECHARGE  
(BANK 0)  
PRECHARGE START  
CAS latency = 3, burstlength = 4  
26  
Integrated Silicon Solution, Inc. — www.issi.com  
Rev. C  
01/22/08  
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