欢迎访问ic37.com |
会员登录 免费注册
发布采购

EPCS1SI8 参数 Datasheet PDF下载

EPCS1SI8图片预览
型号: EPCS1SI8
PDF下载: 下载PDF文件 查看货源
内容描述: [Configuration Memory, 1MX1, Serial, CMOS, PDSO8, PLASTIC, SOIC-8]
分类和应用: 时钟光电二极管内存集成电路
文件页数/大小: 40 页 / 1107 K
品牌: INTEL [ INTEL ]
 浏览型号EPCS1SI8的Datasheet PDF文件第22页浏览型号EPCS1SI8的Datasheet PDF文件第23页浏览型号EPCS1SI8的Datasheet PDF文件第24页浏览型号EPCS1SI8的Datasheet PDF文件第25页浏览型号EPCS1SI8的Datasheet PDF文件第27页浏览型号EPCS1SI8的Datasheet PDF文件第28页浏览型号EPCS1SI8的Datasheet PDF文件第29页浏览型号EPCS1SI8的Datasheet PDF文件第30页  
Figure 15 shows the instruction sequence of the write bytes operation.  
(1)  
Figure 15. Write Bytes Operation Timing Diagram  
nCS  
DCLK  
ASDI  
0
1
2
3
4
5
6
7
8
9
10  
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47  
2072 2073 2074 2075 2076 2077 2078 2079  
Operation Code  
24-Bit Address (2)  
Data Byte 1  
Data Byte 2  
Data Byte 256  
23 22 21  
MSB  
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
MSB (3)  
MSB (3)  
MSB (3)  
Notes to Figure 15:  
(1) Use the erase sector operation or the erase bulk operation to initialize the memory bytes of the EPCS devices to all  
1
or 0xFFbefore implementing the write bytes operation.  
(2) Address bit A[23]is a don't-care bit in the EPCS64 device. Address bits A[23..21]are don't-care bits in the EPCS16 device. Address bits A[23..19]are don't-care bits in the EPCS4 device. Address  
bits A[23..17]are don't-care bits in the EPCS1 device.  
(3) For .rpd files, write the LSB of the data byte first.  
Erase Bulk Operation  
The erase bulk operation code is b'1100 0111and it lists the MSB first. This operation sets all the memory bits to  
Similar to the write bytes operation, you must execute the write enable operation before the erase bulk operation so that the  
write enable latch bit in the status register is set to  
1or 0xFF.  
1.  
You can implement the erase bulk operation by driving the nCSsignal low and then shifting in the erase bulk operation code on  
the ASDIpin. The nCSsignal must be driven high after the eighth bit of the erase bulk operation code has been latched in.  
The device initiates a self-timed erase bulk cycle immediately after the nCSsignal is driven high. For more information about  
the self-timed erase bulk cycle time, refer to the tEB value in Table 16 on page 29.  
You must account for this delay before accessing the memory contents. Alternatively, you can check the write in progress bit in  
the status register by executing the read status operation while the self-timed erase cycle is in progress. The write in progress  
bit is set to  
1during the self-timed erase cycle and 0when it is complete. The write enable latch bit in the status register is reset  
to before the erase cycle is complete.  
0
 复制成功!