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EPCS1SI8 参数 Datasheet PDF下载

EPCS1SI8图片预览
型号: EPCS1SI8
PDF下载: 下载PDF文件 查看货源
内容描述: [Configuration Memory, 1MX1, Serial, CMOS, PDSO8, PLASTIC, SOIC-8]
分类和应用: 时钟光电二极管内存集成电路
文件页数/大小: 40 页 / 1107 K
品牌: INTEL [ INTEL ]
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EPCS Device Memory Access  
Page 25  
Write Bytes Operation  
The write bytes operation code is b'0000 0010and it lists the MSB first. This  
operation allows bytes to be written to the memory. You must execute the write enable  
operation before the write bytes operation to set the write enable latch bit in the status  
register to 1.  
The write bytes operation is implemented by driving the nCSsignal low, followed by  
the write bytes operation code, three address bytes, and at least one data byte on the  
ASDIpin. If the eight LSBs (A[7..0]) are not all  
0, all sent data that goes beyond the  
end of the current page is not written into the next page. Instead, this data is written at  
the start address of the same page (from the address whose eight LSBs are all 0). You  
must ensure the nCSsignal is set low during the entire write bytes operation.  
If more than 256 data bytes are shifted into the EPCS device with a write bytes  
operation, the previously latched data is discarded and the last 256 bytes are written  
to the page. However, if less than 256 data bytes are shifted into the EPCS device, they  
are guaranteed to be written at the specified addresses and the other bytes of the same  
page are not affected.  
If your design requires writing more than 256 data bytes to the memory, more than  
one page of memory is required. Send the write enable and write bytes operation  
codes, followed by three new targeted address bytes and 256 data bytes, before a new  
page is written.  
The nCSsignal must be driven high after the eighth bit of the last data byte has been  
latched in. Otherwise, the device does not execute the write bytes operation. The write  
enable latch bit in the status register is reset to  
0before the completion of each write  
bytes operation. Therefore, the write enable operation must be carried out before the  
next write bytes operation.  
The device initiates a self-timed write cycle immediately after the nCSsignal is driven  
high. For more information about the self-timed write cycle time, refer to the tWB value  
in Table 16 on page 29. You must account for this amount of delay before another page  
of memory is written. Alternatively, you can check the write in progress bit in the  
status register by executing the read status operation while the self-timed write cycle  
is in progress. The write in progress bit is set to  
when it is complete.  
1during the self-timed write cycle and  
0
1
You must erase all the memory bytes of the EPCS devices to all 1or 0xFFbefore you  
implement the write bytes operation. You can erase all the memory bytes by executing  
the erase sector operation in a sector or the erase bulk operation throughout the entire  
memory.  
April 2014 Altera Corporation  
Serial Configuration (EPCS) Devices Datasheet  
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