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28F320J5 参数 Datasheet PDF下载

28F320J5图片预览
型号: 28F320J5
PDF下载: 下载PDF文件 查看货源
内容描述: 的StrataFlash存储器技术32和64 MBIT [StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT]
分类和应用: 存储
文件页数/大小: 53 页 / 638 K
品牌: INTEL [ INTEL ]
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INTEL StrataFlash™ MEMORY TECHNOLOGY, 32 AND 64 MBIT  
0606_04  
NOTE:  
VCC (Pin 42) and GND (Pin 15) are not internally connected. For future device revisions, it is recommended that these pins be  
connected to their respected power supplies (i.e., Pin 42 = VCC and Pin 15 = GND).  
Figure 4. SSOP Lead Configuration (64 Mbit and 32 Mbit)  
After initial device power-up or return from  
reset/power-down mode (see Bus Operations), the  
2.0 PRINCIPLES OF OPERATION  
device defaults to read array mode. Manipulation of  
external memory control pins allows array read,  
standby, and output disable operations.  
The Intel StrataFlash memory devices include an  
on-chip WSM to manage block erase, program, and  
lock-bit configuration functions. It allows for 100%  
TTL-level control inputs, fixed power supplies  
Read array, status register, query, and identifier  
codes can be accessed through the CUI (Command  
User Interface) independent of the VPEN voltage.  
during  
block  
erasure,  
program,  
lock-bit  
configuration, and minimal processor overhead with  
RAM-like interface timings.  
11  
ADVANCE INFORMATION