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IMW120R020M1H 参数 Datasheet PDF下载

IMW120R020M1H图片预览
型号: IMW120R020M1H
PDF下载: 下载PDF文件 查看货源
内容描述: [采用TO247-3封装的1200V 20mΩ  CoolSiCTM 碳化硅MOSFET基于先进的沟槽工艺,该工艺经过优化兼具性能与可靠性。与IGBT和MOSFET等传统的硅(Si)基器件相比,SiC MOSFET具有诸多优势,例如1200 V开关器件中最低的栅极电荷和器件电容、体二极管没有反向恢复损耗、关断损耗受温度影响小以及没有拐点电压的导通特性。因此,CoolSiC™碳化硅 MOSFET非常适用于硬开关和谐振开关拓扑结构,如功率因素校正(PFC)电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。]
分类和应用: 开关DC-DC转换器双极性晶体管功率因数校正二极管栅极
文件页数/大小: 16 页 / 1225 K
品牌: INFINEON [ Infineon ]
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Edition 2023-05-08  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
Important notice  
Please note that this product is not qualified  
according to the AEC Q100 or AEC Q101 documents  
of the Automotive Electronics Council.  
The information given in this document shall in no  
event be regarded as a guarantee of conditions or  
characteristics (“Bꢀschaffꢀnhꢀitsgarantiꢀ”).  
With respect to any examples, hints or any typical  
values stated herein and/or any information regarding  
the application of the product, Infineon Technologies  
hereby disclaims any and all warranties and liabilities  
of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any  
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In addition, any information given in this document is  
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stated in this document and any applicable legal  
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customer’s products and any use of the product of  
Infineon Technologies in customer’s applications.  
Warnings  
Due to technical requirements products may contain  
dangerous substances. For information on the types  
in question please contact your nearest Infineon  
Technologies officꢀ.  
©
2023 Infineon Technologies AG  
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Document reference  
IFX-ABB900-004  
The data contained in this document is exclusively  
intended for technically trained staff. It is the  
responsibility of customer’s technical departments to  
evaluate the suitability of the product for the intended  
application and the completeness of the product  
information given in this document with respect to such  
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