Control Integrated POwer System (CIPOS™)
IFCM15P60GD
Static Parameters
Inverter Section
(VDD = 15V and TJ = 25°C, if not stated otherwise)
Value
typ
Description
Condition
IC = 10A
TJ = 25°C
150°C
Symbol
VCE(sat)
Unit
V
min
max
Collector-Emitter saturation voltage
-
-
1.55
1.8
2.05
-
IF = 10A
Emitter-Collector forward voltage
VF
-
-
1.75
1.8
2.45
-
V
TJ = 25°C
150°C
Collector-Emitter leakage current
Logic "1" input voltage (LIN,HIN)
Logic "0" input voltage (LIN,HIN)
ITRIP positive going threshold
ITRIP input hysteresis
VCE = 600V
ICES
VIH
-
-
1
2.5
-
mA
V
-
2.1
0.9
470
70
VIL
0.7
400
40
V
VIT,TH+
VIT,HYS
540
-
mV
mV
VDD and VBS supply under voltage
positive going threshold
VDDUV+
VBSUV+
10.8
9.5
1.0
-
12.1
10.4
1.7
13.0
11.2
-
V
V
VDD and VBS supply under voltage
negative going threshold
VDDUV-
VBSUV-
VDD and VBS supply under voltage
lockout hysteresis
VDDUVH
VBSUVH
V
Quiescent VBx supply current
(VBx only)
HIN = 0V
IQBS
IQDD
300
370
500
900
µA
µA
Quiescent VDD supply current
(VDD only)
LIN = 0V, HINX=5V
-
Input bias current
VIN = 5V
IIN+
IIN-
-
-
-
-
-
1
2
1.5
mA
µA
µA
µA
V
Input bias current
VIN = 0V
-
ITRIP input bias current
VFO input bias current
VFO output voltage
VITRIP = 5V
IITRIP+
IFO
65
60
0.5
150
VFO = 5V, VITRIP = 0V
IFO = 10mA, VITRIP = 1V
-
-
VFO
Datasheet
9 of 18
V 2.2
2017-09-06
INFINEON [ Infineon ]
