Control Integrated POwer System (CIPOS™)
IFCM15P60GD
PFC Section
(VGE = 15V and TJ = 25°C, if not stated otherwise)
Value
typ
Description
Condition
IC = 30A,
TJ = 25°C
150°C
Symbol
VCE(sat)
Unit
V
min
max
Collector-Emitter saturation
voltage
-
-
1.7
2.0
2.3
-
IF = 30A,
Diode forward voltage
VF
-
-
1.75
1.65
2.3
-
V
TJ = 25°C
150°C
Gate-Emitter threshold voltage
Collector-Emitter leakage current
Gate-Emitter leakage current
Diode reverse leakage current
IC = 0.3mA, VGE=VCE
VCE = 650V, VGE = 0V
VCE = 0V, VGE = 20V
VR = 650V
VGE(th)
ICES
IGES
IR
3.2
4.0
4.8
1
V
-
-
-
-
-
-
mA
µA
mA
1
1
Bootstrap Parameters
(TJ = 25°C, if not stated otherwise)
Value
typ
-
Description
Condition
Symbol
Unit
min
600
max
-
Repetitive peak reverse voltage
Bootstrap diode resistance
VRRM
RBSD
V
Between VF=4V and
VF=5V
-
40
-
Reverse recovery time
IF = 0.6A, di/dt=80A/µs
IF = 0.5mA
trr_BSD
VF_BSD
-
-
50
1
-
-
ns
Bootstrap diode forward voltage
V
Datasheet
10 of 18
V 2.2
2017-09-06
INFINEON [ Infineon ]
