Control Integrated POwer System (CIPOS™)
IFCM15P60GD
Dynamic Parameters
Inverter Section
(VDD = 15V and TJ = 25°C, if not stated otherwise)
Value
typ
680
30
Description
Condition
Symbol
Unit
min
max
Turn-on propagation delay time
Turn-on rise time
ton
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
VLIN,HIN = 5V,
IC = 10A,
VDC = 300V
Turn-on switching time
Reverse recovery time
Turn-off propagation delay time
Turn-off fall time
tc(on)
trr
220
60
toff
tf
950
55
VLIN,HIN = 0V,
IC = 10A,
VDC = 300V
Turn-off switching time
tc(off)
120
Short circuit propagation delay
time
From VIT,TH+ to 10% ISC
VITRIP = 1V
tSCP
tITRIPmin
tFILIN
-
-
1250
530
290
-
-
-
-
-
-
-
ns
ns
ns
µs
µs
ns
Input filter time ITRIP
Input filter time at LIN, HIN for turn
on and off
VLIN,HIN = 0V & 5V
VITRIP = 1V
-
Fault clear time after ITRIP-fault
tFLTCLR
DTPWM
DTIC
40
1.5
-
Deadtime between low side and
high side
-
Deadtime of gate drive circuit
380
VDC = 300V, IC = 10A
TJ = 25°C
150°C
IGBT turn-on energy (includes
reverse recovery of diode)
Eon
Eoff
Erec
-
-
400
490
-
-
µJ
µJ
µJ
VDC = 300V, IC = 10A
TJ = 25°C
150°C
IGBT turn-off energy
-
-
190
290
-
-
VDC = 300V, IC = 10A
TJ = 25°C
150°C
Diode recovery energy
-
-
55
70
-
-
Datasheet
11 of 18
V 2.2
2017-09-06
INFINEON [ Infineon ]
