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BTT6200-4ESA 参数 Datasheet PDF下载

BTT6200-4ESA图片预览
型号: BTT6200-4ESA
PDF下载: 下载PDF文件 查看货源
内容描述: [The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment.]
分类和应用:
文件页数/大小: 51 页 / 1248 K
品牌: INFINEON [ Infineon ]
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PROFET + 24V  
BTT6200-4ESA  
Electrical characteristics and parameters  
4.3.1  
PCB set-up  
70µm  
35µm  
1.5mm  
0.3mm  
PCB 2s2p.vsd  
Figure 5  
2s2p PCB cross section  
Figure 6  
PC board top and bottom view for thermal simulation with 600 mm2 cooling area  
9
Specified Rthja value is according to JEDEC JESD51-2,-5,-7 at natural convection on FR4 2s2p board with 1  
W power dissipation equally dissipated for all channel at TA = 105°C ; The product (chip + package) was  
simulated on a 76.4 mm x 114.3 mm x 1.5 mm board with 2 inner copper layers (2 x 70 μm Cu, 2 x 35 μm  
Cu). Where applicable, a thermal via array under the exposed pad contacts the first inner copper layer.  
Please refer to Figure 5 .  
Datasheet  
13  
Rev. 1.00  
2019-03-09  
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