™
PROFET + 24V
BTT6200-4ESA
Electrical characteristics and parameters
Table 3
Absolute maximum ratings1) (continued)
TJ = -40°C to 150°C; (unless otherwise specified)
Parameter
Symbol
Values
Typ.
Unit
Note or Test
Condition
Number
Min.
-0.3
–
Max.
Voltage at DSEL pin
VDSEL
IDSEL
–
6
7
V
–
P_4.1.17
P_4.1.18
t < 2 min
Current through DSEL pin
Sense pin
-2
–
2
mA
–
Voltage at IS pin
VIS
IIS
-0.3
-25
–
–
VS
V
–
–
P_4.1.19
P_4.1.20
Current through IS pin
50
mA
Power stage
Load current
| IL |
–
–
–
–
IL(LIM)
A
–
P_4.1.21
P_4.1.22
Power dissipation (DC)
PTOT
1.8
W
TA = 85°C
TJ < 150°C
Maximum energy dissipation EAS
Single pulse (one channel)
–
–
–
20
65
mJ
IL(0) = 1 A
TJ(0) = 150°C
VS = 28 V
P_4.1.23
Voltage at power transistor
Currents
VDS
–
–
V
–
P_4.1.26
P_4.1.27
Current through ground pin
I GND
-20
-150
20
20
mA
–
t < 2 min
Temperatures
Junction temperature
Storage temperature
ESD susceptibility
ESD susceptibility (all pins)
TJ
-40
-55
–
–
150
150
°C
°C
–
–
P_4.1.28
P_4.1.30
TSTG
VESD
-2
-4
–
–
2
4
kV
kV
4) HBM
4) HBM
P_4.1.31
P_4.1.32
ESD susceptibility OUT pin vs. VESD
GND and VS connected
ESD susceptibility
VESD
VESD
-500
-750
–
–
500
750
V
V
5) CDM
5) CDM
P_4.1.33
P_4.1.34
ESD susceptibility pin
(corner pins)
Notes:
1.
Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
1
4
5
Not subject to production test. Specified by design.
ESD susceptibility Human Body Model "HBM" according to AEC Q100-002
ESD susceptibility Charged Device Model "CDM" according to AEC Q100-011
Datasheet
10
Rev. 1.00
2019-03-09
INFINEON [ Infineon ]
