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BTT6200-4ESA 参数 Datasheet PDF下载

BTT6200-4ESA图片预览
型号: BTT6200-4ESA
PDF下载: 下载PDF文件 查看货源
内容描述: [The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment.]
分类和应用:
文件页数/大小: 51 页 / 1248 K
品牌: INFINEON [ Infineon ]
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PROFET + 24V  
BTT6200-4ESA  
Electrical characteristics and parameters  
2.  
Integrated protection functions are designed to prevent IC destruction under fault conditions described in  
the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions  
are not designed for continuous repetitive operation.  
4.2  
Functional range  
Table 4  
Functional range  
TJ = -40°C to 150°C; (unless otherwise specified)  
Parameter  
Symbol  
Values  
Typ.  
28  
Unit Note or Test  
Condition  
Number  
Min.  
Max.  
36  
Nominal operating voltage  
Extended operating voltage  
VNOM  
8
5
V
V
7)  
P_4.2.1  
P_4.2.2  
VS(OP)  
48  
V = 4.5 V  
IN  
RL = 47 Ω  
VDS < 0.5 V  
6)  
Minimum functional supply  
voltage  
VS(OP)_MIN  
3.8  
4.3  
3.5  
5
V
V
V
= 4.5 V  
P_4.2.3  
IN  
RL = 47 Ω  
From IOUT = 0 A  
to  
VDS < 0.5 V; see  
Figure 16  
6)  
Undervoltage shutdown  
VS(UV)  
3
4.1  
V = 4.5 V  
IN  
P_4.2.4  
VDEN = 0 V  
RL = 47 Ω  
From VDS < 1 V;  
to IOUT = 0 A  
See Chapter 9.1  
and Figure 16  
7)  
Undervoltage shutdown  
hysteresis  
VS(UV)_HYS  
IGND_1  
850  
2
4
mV  
mA  
P_4.2.13  
P_4.2.5  
Operating current  
One channel active  
VIN = 5.5 V  
VDEN = 5.5 V  
Device in RDS(ON)  
VS = 36 V  
See Chapter 9.1  
7
Not subject to production test. Specified by design.  
Test at TJ = -40°C only.  
6
Datasheet  
11  
Rev. 1.00  
2019-03-09  
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