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BTT6200-4ESA 参数 Datasheet PDF下载

BTT6200-4ESA图片预览
型号: BTT6200-4ESA
PDF下载: 下载PDF文件 查看货源
内容描述: [The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment.]
分类和应用:
文件页数/大小: 51 页 / 1248 K
品牌: INFINEON [ Infineon ]
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PROFET + 24V  
BTT6200-4ESA  
Electrical characteristics and parameters  
4
Electrical characteristics and parameters  
4.1  
Absolute maximum ratings  
Table 3  
Absolute maximum ratings1)  
TJ = -40°C to 150°C; (unless otherwise specified)  
Parameter  
Symbol  
Values  
Typ.  
Unit  
Note or Test  
Condition  
Number  
Min.  
Max.  
Supply voltages  
Supply voltage  
VS  
-0.3  
48  
V
V
P_4.1.1  
P_4.1.2  
Reverse polarity voltage  
-VS(REV)  
0
28  
t < 2 min  
TA = 25°C  
RL ≥ 47 Ω  
ZGND = Diode  
+27 Ω  
Supply voltage for short  
circuit protection  
VBAT(SC)  
0
36  
V
RSupply = 10 mΩ  
LSupply = 5 µH  
RECU= 20 mΩ  
RCable= 16 mΩ/m  
LCable= 1 µH/m,  
l = 0 or 5 m  
P_4.1.3  
See Chapter 6 and  
Figure 29  
Supply voltage for Load dump VS(LD)  
protection  
65  
V
2) RI = 2 Ω  
RL = 47 Ω  
P_4.1.12  
P_4.1.4  
Short circuit capability  
3)  
Permanent short circuit  
IN pin toggles  
nRSC1  
100  
k cycles  
V
_
Input pins  
Voltage at INPUT pins  
VIN  
-0.3  
6
7
P_4.1.13  
t < 2 min  
Current through INPUT pins  
Voltage at DEN pin  
IIN  
-2  
2
mA  
V
P_4.1.14  
P_4.1.15  
VDEN  
-0.3  
6
7
t < 2 min  
Current through DEN pin  
IDEN  
-2  
2
mA  
P_4.1.16  
1
Not subject to production test. Specified by design.  
VS(LD) is setup without the DUT connected to the generator per ISO 7637-1.  
Threshold limit for short circuit failures: 100 ppm. Please refer to the legal disclaimer for short-circuit  
capability at the end of this document.  
2
3
Datasheet  
9
Rev. 1.00  
2019-03-09  
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