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BTT6200-4ESA 参数 Datasheet PDF下载

BTT6200-4ESA图片预览
型号: BTT6200-4ESA
PDF下载: 下载PDF文件 查看货源
内容描述: [The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment.]
分类和应用:
文件页数/大小: 51 页 / 1248 K
品牌: INFINEON [ Infineon ]
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PROFET + 24V  
BTT6200-4ESA  
Electrical characteristics and parameters  
Table 4  
Functional range (continued)  
TJ = -40°C to 150°C; (unless otherwise specified)  
Parameter  
Symbol  
Values  
Typ.  
Unit Note or Test  
Condition  
Number  
Min.  
Max.  
Operating current  
All channels active  
IGND_4  
6
9
mA  
VIN = 5.5 V  
P_4.2.6  
VDEN = 5.5 V  
Device in RDS(ON)  
VS = 36 V  
See Chapter 9.1  
6) VS = 36 V  
VOUT = 0 V  
VIN floating  
VDEN floating  
TJ ≤ 85 °C  
Standby current for whole  
device with load (ambient)  
IS(OFF)  
0.1  
0.5  
20  
µA  
P_4.2.7  
P_4.2.10  
P_4.2.8  
Maximum standby current for  
whole device with load  
IS(OFF)_150  
µA  
VS = 36 V  
VOUT = 0 V  
VIN floating  
VDEN floating  
TJ = 150 °C  
7) VS = 36 V  
VOUT = 0 V  
Standby current for whole  
device with load, diagnostic  
active  
IS(OFF_DEN)  
0.6  
mA  
VIN floating  
VDEN = 5.5 V  
Note:  
Within the functional range the IC operates as described in the circuit description. The electrical  
characteristics are specified within the conditions given in the related electrical characteristics table.  
4.3  
Thermal resistance  
Table 5  
Thermal resistance  
Parameter  
Symbol  
Values  
Typ.  
Unit Note or Test  
Condition  
Number  
Min.  
Max.  
8)  
Junction to case  
RthJC  
RthJA  
3
K/W  
P_4.3.1  
P_4.3.2  
8)9)  
Junction to ambient  
All channels active  
28  
K/W  
6
Test at TJ = -40°C only.  
Not subject to production test. Specified by design.  
Not subject to production test. Specified by design.  
7
8
Datasheet  
12  
Rev. 1.00  
2019-03-09  
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