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2ED2110S06M 参数 Datasheet PDF下载

2ED2110S06M图片预览
型号: 2ED2110S06M
PDF下载: 下载PDF文件 查看货源
内容描述: [650 V high speed, high current high-side and low-side gate driver with typical 2.5 A source and sink currents in DSO-16 package for driving power MOSFETs and IGBTs.]
分类和应用: 双极性晶体管
文件页数/大小: 31 页 / 1407 K
品牌: INFINEON [ Infineon ]
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2ED2110S06M  
650 V high-side and low-side driver with integrated bootstrap diode  
4
Electrical parameters  
4.1  
Absolute maximum ratings  
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage  
parameters are absolute voltages referenced to COM unless otherwise stated in the table. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions.  
Table 2  
Absolute maximum ratings  
Symbol  
VDD  
VB  
Definition  
Logic supply voltage  
Min.  
VSS 1  
VCC 6  
VCC VBS6  
VS 0.5  
-1  
Max.  
VSS + 25  
675  
650  
VB + 0.5  
25  
Units  
High-side floating well supply voltage Note 1  
High-side floating well supply return voltage  
Floating gate drive output voltage  
Low side supply voltage  
VS  
VHO  
VCC  
V
VLO  
VIN  
VSS  
Low-side output voltage  
Logic input voltage (HIN, LIN & SD)  
Logic ground  
0.5  
VSS 5  
-7  
VCC + 0.5  
VDD +0.5  
7
dVS/dt Allowable VS offset supply transient relative to COM  
50  
1.25  
V/ns  
W
PD  
Package power dissipation @ TA +25ºC  
RthJA  
TJ  
TS  
Thermal resistance, junction to ambient  
Junction temperature  
Storage temperature  
-55  
100  
150  
150  
300  
ºC/W  
ºC  
TL  
Lead temperature (soldering, 10 seconds)  
Note 1:  
activated bootstrap diode.  
In case VCC > VB there is an additional power dissipation in the internal bootstrap diode between pins VCC and VB in case of  
4.2  
Recommended operating conditions  
For proper operation, the device should be used within the recommended conditions. All voltage parameters  
are absolute voltages referenced to COM unless otherwise stated in the table. The offset rating is tested with  
supplies of (VCC COM) = (VB VS) = 15 V.  
Table 3  
Recommended operating conditions  
Symbol  
VDD  
Definition  
Logic supply voltage  
Logic ground  
Min  
VSS + 3  
-6  
Max  
VSS + 20  
6
Units  
VSS  
VB  
Bootstrap voltage  
VS + 10  
VS + 20  
VBS  
High-side floating well supply voltage  
10  
-11  
VS  
10  
0
20  
650  
VB  
V
VS  
VHO  
VCC  
VLO  
VIN  
TA  
High-side floating well supply offset voltage Note 2  
Floating gate drive output voltage  
Note 3  
Low-side supply voltage  
20  
Low-side output voltage  
Logic input voltage(HIN, LIN & SD)  
Ambient temperature  
VCC  
VDD  
125  
VSS - 4  
-40  
ºC  
Note 2: Logic operation for VS of 11 V to +650 V.  
Note 3: Vcc - Vss > 5V is required.  
Datasheet  
www.infineon.com/soi  
6 of 31  
V 2.5  
2023-01-31  
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