欢迎访问ic37.com |
会员登录 免费注册
发布采购

2ED2110S06M 参数 Datasheet PDF下载

2ED2110S06M图片预览
型号: 2ED2110S06M
PDF下载: 下载PDF文件 查看货源
内容描述: [650 V high speed, high current high-side and low-side gate driver with typical 2.5 A source and sink currents in DSO-16 package for driving power MOSFETs and IGBTs.]
分类和应用: 双极性晶体管
文件页数/大小: 31 页 / 1407 K
品牌: INFINEON [ Infineon ]
 浏览型号2ED2110S06M的Datasheet PDF文件第1页浏览型号2ED2110S06M的Datasheet PDF文件第2页浏览型号2ED2110S06M的Datasheet PDF文件第3页浏览型号2ED2110S06M的Datasheet PDF文件第4页浏览型号2ED2110S06M的Datasheet PDF文件第6页浏览型号2ED2110S06M的Datasheet PDF文件第7页浏览型号2ED2110S06M的Datasheet PDF文件第8页浏览型号2ED2110S06M的Datasheet PDF文件第9页  
2ED2110S06M  
650 V high-side and low-side driver with integrated bootstrap diode  
3
Pin configuration and functionality  
3.1  
Pin configuration  
16-Lead DSO-16 (300 mil wide body)  
2ED2110S06M  
Figure 3  
2ED2110S06M pin assignments (top view)  
3.2  
Pin functionality  
Table 1  
Symbol  
VDD  
Description  
Logic supply voltage  
HIN  
Logic input for high side gate driver output (HO), in phase with HO  
Logic input for shut down, in phase. Schmitt trigger input with hysteresis and pull  
down  
SD  
LIN  
VSS  
HO  
VB  
Logic input for low side gate driver output (LO), in phase with LO  
Logic ground  
High-side driver output  
High-side gate drive floating supply  
High voltage floating supply return  
Low-side supply voltage  
VS  
VCC  
COM  
LO  
Low-side gate drive return  
Low-side driver output  
Datasheet  
www.infineon.com/soi  
5 of 31  
V 2.5  
2023-01-31  
 复制成功!