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2ED2110S06M 参数 Datasheet PDF下载

2ED2110S06M图片预览
型号: 2ED2110S06M
PDF下载: 下载PDF文件 查看货源
内容描述: [650 V high speed, high current high-side and low-side gate driver with typical 2.5 A source and sink currents in DSO-16 package for driving power MOSFETs and IGBTs.]
分类和应用: 双极性晶体管
文件页数/大小: 31 页 / 1407 K
品牌: INFINEON [ Infineon ]
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2ED2110S06M  
650 V high-side and low-side driver with integrated bootstrap diode  
5.3  
Matched propagation delays  
The 2ED2110S06M is designed with propagation delay matching circuitry. With this feature, the IC’s response at  
the output to a signal at the input requires approximately the same time duration (i.e., tON, tOFF) for both the low-  
side channels and the high-side channels; the maximum difference is specified by the delay matching parameter  
(MT). The propagation turn-on delay (tON) of the 2ED2110S06M is matched to the propagation turn-on delay (tOFF).  
50%  
50%  
HIN  
LIN  
LO  
HO  
10%  
MT  
HO  
MT  
90%  
LO  
Figure 8  
Delay matching waveform definition  
5.4  
Enable or shutdown input  
2ED2110S06M provides an enable functionality that allows to shutdown or to enable the output. When SD in  
pulled up (the enable voltage is higher than VIH) the output is disable, pulling SD low (the enable voltage is lower  
than VIL) the output is able to operate normally. The relationships between the input, output and shutdown  
signals of the 2ED2110S06M are illustrated in Figure 9. From these figures, we can see the definition of the  
parameter (i.e. tSD) associated with this device.  
Figure 9  
Shutdown waveform definitions  
5.5  
Input logic compatibility  
The input pins of are based on a TTL and CMOS compatible input-threshold logic that is independent of the Vcc  
supply voltage. Figure 10 illustrates an input signal to the 2ED2110S06M, its input threshold values, and the logic  
state of the IC as a result of the input signal. The 2ED2110S06M features floating input protection wherein if any  
Datasheet  
www.infineon.com/soi  
10 of 31  
V 2.5  
2023-01-31  
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