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2ED2110S06M 参数 Datasheet PDF下载

2ED2110S06M图片预览
型号: 2ED2110S06M
PDF下载: 下载PDF文件 查看货源
内容描述: [650 V high speed, high current high-side and low-side gate driver with typical 2.5 A source and sink currents in DSO-16 package for driving power MOSFETs and IGBTs.]
分类和应用: 双极性晶体管
文件页数/大小: 31 页 / 1407 K
品牌: INFINEON [ Infineon ]
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2ED2110S06M  
650 V high-side and low-side driver with integrated bootstrap diode  
4.4  
Dynamic electrical characteristics  
(VDD VSS) = (VCC COM) = (VB VS) = 15 V, VSS = COM, TA = 25 °C and CL = 1000 pF unless otherwise specified.  
Table 5 Dynamic electrical characteristics  
Symbol Definition  
Min.  
Typ.  
90  
90  
100  
25  
17  
Max.  
110  
110  
120  
35  
Units  
ns  
Test Conditions  
VS = 0V or 650V  
tON Turn-on propagation delay  
tOFF Turn-off propagation delay  
tSD Shutdown propagation delay  
tR  
tF  
Turn-on rise time  
Turn-off fall time  
VS = 0V  
25  
Delay matching time (HS & LS turn-  
on/off)  
MT  
10  
Datasheet  
www.infineon.com/soi  
8 of 31  
V 2.5  
2023-01-31  
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