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2ED2110S06M 参数 Datasheet PDF下载

2ED2110S06M图片预览
型号: 2ED2110S06M
PDF下载: 下载PDF文件 查看货源
内容描述: [650 V high speed, high current high-side and low-side gate driver with typical 2.5 A source and sink currents in DSO-16 package for driving power MOSFETs and IGBTs.]
分类和应用: 双极性晶体管
文件页数/大小: 31 页 / 1407 K
品牌: INFINEON [ Infineon ]
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2ED2110S06M  
650 V high-side and low-side driver with integrated bootstrap diode  
Figure 22  
Avoid antenna loops  
Supply Capacitor: It is recommended to place a bypass capacitor (CIN) between the VCC and COM pins. A ceramic  
1μF ceramic capacitor is suitable for most applications. This component should be placed as close as possible  
to the pins in order to reduce parasitic elements.  
Routing and Placement: Power stage PCB parasitic elements can contribute to large negative voltage transients  
at the switch node; it is recommended to limit the phase voltage negative transients. In order to avoid such  
conditions, it is recommended to 1) minimize the high-side emitter to low-side collector distance, and 2)  
minimize the low-side emitter to negative bus rail stray inductance. However, where negative VS spikes remain  
excessive, further steps may be taken to reduce the spike. This includes placing a resistor (5 Ω or less) between  
the VS pin and the switch node (see Figure 23 - A), and in some cases using a clamping diode between COM and  
VS (see Figure 23- B). See DT04-4 at www.infineon.com for more detailed explanations.  
Figure 23  
Resistor between the VS pin and the switch node and clamping diode between COM and VS  
Datasheet  
www.infineon.com/soi  
19 of 31  
V 2.5  
2023-01-31  
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