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70825L45GB 参数 Datasheet PDF下载

70825L45GB图片预览
型号: 70825L45GB
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 8KX16, 45ns, CMOS, CPGA84, 1.120 X 1.12 INCH, 0.160 INCH HEIGHT, CERAMIC, PGA-84]
分类和应用: 静态存储器
文件页数/大小: 21 页 / 192 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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IDT70825S/L  
High-Speed 8K x 16 Sequential Access Random Access Memory  
Industrial and Commercial Temperature Ranges  
Truth Table I: Random Access Read and Write(1,2)  
Inputs/Outputs  
R/W  
H
H
H
L
I/O  
0
-I/O  
7
I/O8-I/O15  
Mode  
CE  
L
CMD  
H
OE  
L
LB  
L
UB  
L
DATAOUT  
DATAOUT  
High-Z  
DATAIN  
DATAIN  
High-Z  
DATAOUT Read both Bytes.  
L
H
L
L
H
L
High-Z  
Read lower Byte only.  
L
H
L
H
L
DATAOUT Read upper Byte only.  
(3)  
L
H
H
L
DATAIN  
High-Z  
DATAIN  
High-Z  
High-Z  
High-Z  
DATAIN  
DATAOUT  
Write to both Bytes.  
(3)  
L
H
L
H
L
H
L
Write to lower Byte only.  
Write to upper Byte only.  
(3)  
L
H
L
H
X
H
X
H
X
X
H
H
L
H
X
H
X
L
X
X
H
High-Z  
Both Bytes deselected and powered down.  
Outputs disabled but not powered down.  
Both Bytes deselected but not powered down.  
H
High-Z  
L
H
High-Z  
(3)  
(4)  
(4)  
H
H
L
H
L
L
L
DATAIN  
DATAOUT  
Write I/O  
0-I/O11 to the Buffer Command Register.  
(4)  
(4)  
L
L
L
H
Read contents of the Buffer Command Register  
via I/O -I/O12.  
0
3016 tbl 11  
NOTES:  
1. H = VIH, L = VIL, X = Don't Care, and High-Z = High-impedance.  
2. RST, SCE, CNTEN, SR/W, SLD, SSTRT1, SSTRT2, SCLK, SI/O0-SI/O15, EOB1, EOB2, and SOE are unrelated to the random access port control and operation.  
3. If OE = VIL during write, tWHZ must be added to the tWP or tCW write pulse width to allow the bus to float prior to being driven.  
4. Byte operations to control register using UB and LB separately are also allowed.  
Truth Table II: Sequential Read(1,2,3,6,8)  
Inputs/Outputs  
SCLK  
SR/W  
H
SI/O  
[EOB  
[EOB1 - 1  
[EOB  
[EOB2 - 1  
High-Z  
MODE  
Counter Advanced Sequential Read with EOB  
Non-Counter Advanced Sequential Read, without EOB  
Counter Advanced Sequential Read with EOB reched.  
Non-Counter Advanced Sequential Read without EOB  
Counter Advanced Sequential Non-Read with EOB  
SCE  
L
CNTEN  
EOB  
1
EOB  
2
SOE  
L
L
H
L
H
L
LOW LAST  
LAST LAST  
1
]
1 reached.  
L
H
L
]
1
reached  
L
H
LAST  
LAST LAST  
LOW LOW  
LOW  
L
2]  
2
L
H
L
]
2
reached.  
L
H
H
1
and EOB2 reached.  
3016 tbl 12  
Truth Table III: Sequential Write(1,2,3,4,5,6,7,8)  
Inputs/Outputs  
SCLK  
SR/W  
L
SI/O  
SI/OIN Non-Counter Advanced Sequential Write, without EOB  
SI/OIN Coounter Advanced Sequential Write with EOB and EOB  
MODE  
SCE CNTEN  
EOB  
LAST LAST  
LOW LOW  
1
EOB  
2
SOE  
H
L
L
H
L
H
L
1
or EOB  
2 reached.  
L
H
1
2
reached.  
H
H
X
LAST LAST  
NEXT NEXT  
X
High-Z No Write or Read due to Sequential port Deselect. No counter advance.  
High-Z No Write or Read due to Sequential port Deselect. Counter does advance.  
X
X
3016 tbl 13  
NOTES:  
1. H = VIH, L = VIL, X = Don't Care, and HIGH-Z = High-impedance. LOW = VOL.  
2. RST, SLD, SSTRT1, SSTRT2 are continuously HIGH during a sequential write access, other than pointer access operations.  
3. CE, OE, R/W, CMD, LB, UB, and I/O0-I/O15 are unrelated to the sequential port control and operation except for CMD which must not be used concurrently with the sequential  
port operation (due to the counter and register control). CMD should be HIGH (CMD = VIH) during sequential port access.  
4. SOE must be HIGH (SOE=VIH) prior to write conditions only if the previous cycle is a read cycle, since the data being written must be an input at the rising edge of the clock  
during the cycle in which SR/W = VIL.  
5. SI/OIN refers to SI/O0-SI/O15 inputs.  
6. "LAST" refers to the previous value still being output, no change.  
7. Termination of a write is done on the LOW-to-HIGH transition of SCLK if SR/W or SCE is HIGH.  
8. When CLKEN=LOW, the address is incremented on the next rising edge before any operation takes place. See the diagrams called "Sequential Counter Enable Cycle after  
Reset, Read (and write) Cycle".  
6.42  
7
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