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70825L45GB 参数 Datasheet PDF下载

70825L45GB图片预览
型号: 70825L45GB
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 8KX16, 45ns, CMOS, CPGA84, 1.120 X 1.12 INCH, 0.160 INCH HEIGHT, CERAMIC, PGA-84]
分类和应用: 静态存储器
文件页数/大小: 21 页 / 192 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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IDT70825S/L  
High-Speed 8K x 16 Sequential Access Random Access Memory  
Industrial and Commercial Temperature Ranges  
Absolute Maximum Ratings(1)  
Recommended Operating  
TemperatureandSupplyVoltage(1,2)  
Symbol  
Rating  
Commercial  
& Industrial  
Unit  
Grade  
Ambient  
Temperature  
GND  
Vcc  
(2)  
V
TERM  
Te rminal Vo ltag e  
with Respect  
to GND  
-0.5 to +7.0  
V
Commercial  
Industrial  
0OC to +70OC  
0V  
0V  
5.0V  
5.0V  
+
+
10%  
10%  
-40OC to +85OC  
Temperature  
Under Bias  
-55 to +125  
-65 to +150  
50  
oC  
oC  
T
BIAS  
3016 tbl 04a  
NOTES:  
TSTG  
Storage  
Temperature  
1. This is the parameter TA. This is the "instant on" case temperature.  
2. Industrial temperature: for specific speeds, packages and powers contact your  
sales office.  
DC Output  
Current  
mA  
IOUT  
3016 tbl 03a  
NOTES:  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM  
RATINGS may cause permanent damage to the device. This is a stress  
rating only and functional operation of the device at these or any other  
conditions above those indicated in the operational sections of this  
specification is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect reliability.  
2. VTERM must not exceed Vcc + 10% for more than 25% of the cycle time  
or 10ns maximum, and is limited to < 20mA for the period of VTERM >  
Vcc + 10%.  
Recommended DC Operating  
Conditions  
Symbol  
Parameter  
Supply Voltage  
GND Ground  
Min.  
Typ. Max. Unit  
VCC  
4.5  
5.0  
5.5  
0
V
V
V
0
0
Capacitance  
____  
V
IH  
Input High Voltage  
Input Low Voltage  
2.2  
6.0(2)  
0.8  
(TA = +25°C, f = 1.0mhz, TQFP only)  
____  
VIL  
-0.5(1)  
V
Symbol  
Parameter  
Input Capacitance  
Output Capacitance  
Conditions(2)  
IN = 3dV  
OUT = 3dV  
Max. Unit  
3016 tbl 05  
NOTES:  
CIN  
V
9
pF  
1. VIL > –1.5V for pulse width less than 10ns.  
2. VTERM must not exceed Vcc + 10%.  
COUT  
V
10  
pF  
3016 tbl 06  
NOTES:  
1. This parameter is determined by device characterization, but is not production  
tested.  
2. 3dV references the interpolated capacitance when the input and output signals  
switch from 0V to 3V or from 3V to 0V.  
DC Electrical Characteristics Over the Operating  
Temperature and Supply Voltage Range (VCC = 5.0V ± 10%)  
70825S  
70825L  
Symbol  
|ILI  
|ILO  
Parameter  
Input Leakage Current  
Test Conditions  
CC = 5.5V, VIN = 0V to VCC  
Min.  
Max.  
5
Min.  
Max.  
Unit  
µA  
µA  
V
___  
___  
|
V
1
1
___  
___  
___  
___  
|
Output Leakage Current  
Output Low Voltage  
Output High Voltage  
V
OUT = 0V to VCC  
OL = +4mA  
OH = -4mA  
5
VOL  
I
0.4  
0.4  
___  
___  
VOH  
I
2.4  
2.4  
V
3016 tbl 07  
4
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