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HC6856XSHCC35 参数 Datasheet PDF下载

HC6856XSHCC35图片预览
型号: HC6856XSHCC35
PDF下载: 下载PDF文件 查看货源
内容描述: 32K x 8静态RAM [32K x 8 STATIC RAM]
分类和应用:
文件页数/大小: 12 页 / 160 K
品牌: HONEYWELL [ Honeywell ]
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HC6856  
ORDERING INFORMATION (1)  
40  
H
Q
H
6856/1  
X
Z
C
C
PART NUMBER  
Pinout options (2)  
SCREEN LEVEL (1)  
V=QML Class V  
Q=QML Class Q  
S=Level S  
B=Level B  
E=Engr Device (4)  
SOFT ERROR  
RATE  
SPEED (5)  
60 ns  
Z=<1x10-10 upsets/bit-day  
PROCESS  
C=CMOS  
A=<1x10-9 upsets/bit-day (3)  
C=<1x10-7 upsets/bit-day  
- =No SER Guaranteed  
40 ns  
35 ns  
SOURCE  
H=HONEYWELL  
PACKAGE DESIGNATION  
W=36-Lead FP  
X=36-Lead FP, with standoff  
Y=36-Lead FP, with standoff & caps  
N=28-Lead FP  
TOTAL DOSE  
HARDNESS  
INPUT BUFFER TYPE  
C=CMOS Level  
T=TTL Level  
R=1x105rad(SiO2)  
F=3x105 rad(SiO2)  
H=1x106 rad(SiO2)  
N=No Level Guaranteed  
R=28-Lead DIP  
- = Bare Die (No Package)  
(1) Orders may be faxed to 612-954-2051. Please contact our Customer Logistics Department at 612-954-2888 for further information.  
(2) Pinout options:  
36-Lead FP  
28-Lead FP & DIP  
pin 32 pin 33  
pin 34  
HC6856/1  
HC6856/2  
A13  
CE  
CE  
NWE  
A13  
JEDEC Pinout  
N/A  
NWE  
(3) SER <1E-10 u/b-d from -55 to 80°C.  
(4) Engineering Device description: Parameters are tested from -55 to 125°C, 24 hr burn-in, no radiation guaranteed.  
(5) Only specified for Engineering Devices. Number defines worst case maximum Write Cycle time in nano-seconds (ns).  
Contact Factory with other needs.  
To lea r n m or e a bou t Hon eyw ell Solid Sta te Electr on ics Cen ter ,  
visit ou r w eb site a t h ttp ://w w w .ssec.h on eyw ell.com  
Honeywell reserves the right to make changes to any products or technology herein to improve reliability, function or design. Honeywell does not assume any liability  
arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others.  
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