HC6856
DC ELECTRICAL CHARACTERISTICS
Typical Worst Case (2)
Symbol
Parameter
Units
Test Conditions (3)
(1)
0.02
0.02
5.5
Min
Max
VIH=VDD IO=0
VIL=VSS Inputs Stable
IDDSB1
IDDSB2
Static Supply Current
1.2
mA
mA
mA
mA
µA
CE=VSS or NCS=VDD
IO=0, VSS≤ VI≤VDD (4)
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (5)
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (5)
Static Supply Current with Chip Disabled
1.2
7.5
6.5
+5
IDDOPW Dynamic Supply Current, Selected (Write)
IDDOPR
II
Dynamic Supply Current, Selected (Read)
Input Leakage Current
4.5
VSS≤VI≤VDD
0.05
0.1
-5
VSS≤VIO≤VDD
IOZ
Output Leakage Current
-10
10
µA
Output=high Z
VIL
Low-Level InputVoltage
High-Level Input Voltage
CMOS
TTL
1.9
1.3
0.3xVDD
V
V
VDD=4.5V
VDD=4.5V
0.8
VIH
CMOS
TTL
3.0 0.7xVDD
1.7
V
V
VDD=5.5V
VDD=5.5V
2.2
0.2
0.4
0.05
V
V
VDD=4.5V, IOL=10 mA
VOL
VOH
Low-Level Output Voltage
High-Level Output Voltage
VDD=4.5V, IOL=200 µA
4.8
4.2
VDD-0.05
V
V
VDD=4.5V, IOH=-5 mA
VDD=4.5V, IOH=-200 µA
(1) Typical operating conditions: VDD= 5.0 V,TA=25°C, pre-radiation.
(2) Worst case operating conditions: VDD=4.5 V to 5.5 V, TA=-55°C to +125°C, post total dose at 25°C.
(3) Input high = VIH ≥ VDD-0.3V, input low =VIL ≤ 0.3V
(4) Guaranteed but not tested.
(5) All inputs switching. DC average current.
2.9 V
Valid high
output
+
-
Vref1
Vref2
249Ω
+
-
Valid low
output
DUT
output
C >50 pF*
L
*C = 5 pF for TWLQZ, TSHQZ, TELQZ, and TGHQZ
L
Tester Equivalent Load Circuit
5
HONEYWELL [ Honeywell ]
