HC6856
ABSOLUTE MAXIMUM RATINGS (1)
Rating
Symbol
Parameter
Units
Min
-0.5
-0.5
-65
Max
7.0
VDD
Positive Supply Voltage (2)
Voltage on Any Pin (2)
V
V
VPIN
VDD+0.5
150
TSTORE
TSOLDER
PD
Storage Temperature (Zero Bias)
Soldering Temperature • Time
Total Package Power Dissipation (3)
DC or Average Output Current
ESD Input Protection Voltage (4)
Thermal Resistance (Jct-to-Case) 28 FP/36 FP
28 DIP
°C
270•5
2.5
°C•s
W
IOUT
25
mA
V
VPROT
ΘJC
2000
2
°C/W
°C/W
°C
10
TJ
Junction Temperature
175
(1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is not
implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability.
(2) Voltage referenced to VSS.
(3) RAM power dissipation (IDDSB + IDDOP) plus RAM output driver power dissipation due to external loading must not exceed this specification.
(4) Class 2 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DESC certified lab.
RECOMMENDED OPERATING CONDITIONS
Description
Parameter
Symbol
Units
Typ
5.0
25
Max
5.5
Min
4.5
VDD
TA
Supply Voltage (referenced to VSS)
Ambient Temperature
V
°C
V
-55
-0.3
125
VPIN
Voltage on Any Pin (referenced to VSS)
VDD+0.3
CAPACITANCE (1)
Worst Case
Symbol
Parameter
Test Conditions
Typical
Units
Max
6
CI
Input Capacitance
Output Capacitance
4
pF
pF
VI=VDD or VSS, f=1 MHz
VIO=VDD or VSS, f=1 MHz
CO
6.5
8
(1) This parameter is tested during initial design characterization only.
DATA RETENTION CHARACTERISTICS
Worst Case
Typical
(1)
Symbol
Parameter (2)
Units
Test Conditions
Max
Min
NCS=VDR
VDR
IDR
Data Retention Voltage (3)
2.0
2.5
V
VI=VDR or VSS
NCS=VDD=VDR
VI=VDR or VSS
Data Retention Current
150
400
µA
(1) Typical operating conditions: TA= 25°C, pre-radiation.
(2) Worst case operating conditions: TA= -55°C to +125°C, post total dose at 25°C.
(3) To maintain valid data storage during transient radiation, VDD must be held within the recommended operating range.
4
HONEYWELL [ Honeywell ]
