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TEA1716T 参数 Datasheet PDF下载

TEA1716T图片预览
型号: TEA1716T
PDF下载: 下载PDF文件 查看货源
内容描述: 谐振电源控制IC带PFC ,该TEA1716集成了功率因数校正(PFC)控制器和一个控制器,用于一个半桥谐振转换器( HBC)中的多芯片IC中。 [Resonant power supply control IC with PFC,The TEA1716 integrates a Power Factor Corrector (PFC) controller and a controller for a Half-Bridge resonant Converter (HBC) in a multi-chip IC.]
分类和应用: 转换器功率因数校正控制器
文件页数/大小: 46 页 / 701 K
品牌: ETC [ ETC ]
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TEA1716T  
NXP Semiconductors  
Resonant power supply control IC with PFC  
7.7.9 PFC boost overvoltage protection, OVP-boost (pin SNSBOOST)  
An overvoltage protection circuit has been built in to prevent boost overvoltages during  
load steps and mains transients.  
Switching of the power factor correction circuit is inhibited as soon as the voltage on the  
SNSBOOST pin rises above Vovp(SNSBOOST). PFC switching resumes as soon as  
V
SNSBOOST drops below Vovp(SNSBOOST) again.  
Overvoltage protection is also triggered in the event of an open circuit at the resistor  
connected between SNSBOOST and ground.  
7.7.10 PFC short circuit/open-loop protection, SCP/OLP-PFC (pin SNSBOOST)  
The power factor correction circuit does not start switching until the voltage on the  
SNSBOOST pin rises above Vscp(SNSBOOST). This acts as short circuit protection for the  
boost voltage (SCP-boost).  
The SNSBOOST pin draws a small input current Iprot(SNSBOOST). If this pin gets  
disconnected, the residual current pulls down VSNSBOOST, triggering short circuit  
protection (SCP-boost). This combination creates an open-loop protection (OLP-PFC).  
7.8 HBC controller  
The HBC controller converts the 400 V boost voltage from the PFC into one or more  
regulated DC output voltages. It drives two external MOSFETS in a half-bridge  
configuration connected to a transformer. The transformer, which has a leakage  
inductance and a magnetizing inductance, forms the resonant circuit in combination with  
the resonant capacitor and the load at the output. The regulation is realized via frequency  
control.  
7.8.1 HBC high-side and low-side driver (pin GATEHS and GATELS)  
Both drivers have identical driving capability. The output of each driver is connected to the  
equivalent gate of an external high-voltage power MOSFET.  
The low-side driver is referenced to pin PGND and is supplied from SUPREG.  
The high-side driver is floating. The reference for the high-side driver is pin HB, connected  
to the midpoint of the external half-bridge. The high-side driver is supplied from SUPHS  
which is connected to the external bootstrap capacitor CSUPHS. The bootstrap capacitor is  
charged from SUPREG via external diode DSUPHS when the low-side MOSFET is on.  
7.8.2 HBC boost undervoltage protection, UVP-boost (pin SNSBOOST)  
The voltage on the SNSBOOST pin is sensed continuously to prevent the HBC controller  
trying to operate at very low boost input voltages. Once VSNSBOOST drops below  
V
uvp(SNSBOOST), HBC switching stops the next time GATELS goes HIGH. HBC switching  
resumes as soon as VSNSBOOST rises above Vstart(SNSBOOST).  
TEA1716T  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Objective data sheet  
Rev. 1 — 27 January 2012  
20 of 46  
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