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P11C68-35IG 参数 Datasheet PDF下载

P11C68-35IG图片预览
型号: P11C68-35IG
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS / SNOS NVSRAM高性能为8K ×8非易失性静态RAM [CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM]
分类和应用: 静态存储器
文件页数/大小: 17 页 / 156 K
品牌: ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
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P10C68/P11C68  
VCC  
5.0V  
3.3V  
t
AUTO RECALL  
STORE INHIBIT  
Figure 8. Automatic RECALL and STORE inhibit.  
NON-VOLATILE MEMORY OPERATION OF P10C68  
MODE SELECTION  
E
H
L
L
L
L
L
L
G
X
L
NE  
X
H
H
L
Mode  
Power  
Standby  
W
X
H
L
Not selected  
Read RAM  
Write RAM  
Active  
Active  
Active  
X
L
Non-volatile recall (Note 15)  
Non-volatile store  
H
L
H
L
L
I
CC2  
L
No operation  
Active  
L
H
X
H
NOTE  
15.  
An automatic RECALL also takes place on chip power-up, starting when Vcc exceeds 3.3V, and taking t  
from the  
RECALL  
time at which Vcc exceeds 3.3V. Vcc must not drop below 3.3V once it has exceeded it for the RECALL to function  
properly.  
STORE CYCLE 1 : W (BAR) CONTROLLED (See note 16)  
P10C68-35  
Max.  
10  
0
0
45  
0
P10C68-45  
Symbol  
Units  
Notes  
17  
Parameter  
Min.  
Max.  
10  
Alternative  
Min.  
Standard  
ms  
ns  
ns  
ns  
ns  
Store cycle time  
t
t
t
t
t
WLQX  
STORE  
Output disable set-up to NE (bar) fall  
Non-volatile set-up to write low  
Write low to NE (bar) rise  
Chip enable SET-UP  
0
0
45  
0
GHNL  
NLWL  
WLNH  
18  
t
WC  
t
ELWL  
8