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P11C68-35IG 参数 Datasheet PDF下载

P11C68-35IG图片预览
型号: P11C68-35IG
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS / SNOS NVSRAM高性能为8K ×8非易失性静态RAM [CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM]
分类和应用: 静态存储器
文件页数/大小: 17 页 / 156 K
品牌: ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
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P10C68/P11C68  
tAVAV  
ADDRESS  
E
tEHICCL  
tELQV  
tELQX  
tEHQZ  
tGLQV  
G
tGHQZ  
tGLQX  
DQ (DATA OUT)  
ACTIVE  
DATA VALID  
tELICCH  
ICC  
STANDBY  
W
tWHQV  
F
igure 5. READ CYCLE 2 timing diagram (see note 9).  
WRITE CYCLE 1 : W (BAR) CONTROLLED (See notes 8 and 13)  
Commercial and Industrial Temperature Range  
P10C68-45  
P11C68-45  
P10C68-35  
P11C68-35  
Max.  
Symbol  
Alternative  
Units  
Notes  
Parameter  
Min.  
Max.  
Min.  
Standard  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Write cycle time  
Write pulse width  
45  
35  
35  
30  
0
35  
0
0
t
t
t
t
45  
35  
35  
30  
0
35  
0
0
t
AVAV  
WC  
WP  
CW  
DW  
DH  
AW  
t
WLWH  
Chip enable to end of write  
Data set-up to end of write  
Data hold after end of write  
Address set-up to end of write  
Address set-up to start of write  
Address hold after end of write  
Write enable to output disable  
Output active after end of write  
t
ELWH  
DVWH  
WHDX  
AVWH  
t
t
t
t
t
t
t
t
AVWL  
AS  
t
WHAX  
WR  
35  
11, 14  
35  
t
t
t
WLQZ  
WHQZ  
WZ  
5
t
5
OW  
NOTES  
13.  
14.  
E (bar) or W (bar) must be VIH during address transitions.  
If W (bar) is low when E (bar) goes low, the outputs remain in the high impedance state.  
6