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P11C68-35IG 参数 Datasheet PDF下载

P11C68-35IG图片预览
型号: P11C68-35IG
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS / SNOS NVSRAM高性能为8K ×8非易失性静态RAM [CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM]
分类和应用: 静态存储器
文件页数/大小: 17 页 / 156 K
品牌: ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
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P10C68/P11C68  
NON-VOLATILE MEMORY OPERATION OF P11C68  
MODE SELECTION  
E
H
L
W
X
H
L
A
12  
-A (hex)  
0
Mode  
Not selected  
I/O  
Power  
Standby  
Active  
Notes  
X
Output High Z  
Output data  
Input Data  
X
Read RAM  
22  
L
X
Write RAM  
Active  
L
H
0000  
1555  
0AAA  
1FFF  
10F0  
0F0F  
0000  
1555  
0AAA  
1FFF  
10F0  
0F0E  
Read RAM  
Output Data  
Output Data  
Output Data  
Output Data  
Output Data  
Output High Z  
Output Data  
Output Data  
Output Data  
Output Data  
Output Data  
Output High Z  
Active  
21, 22  
21, 22  
21, 22  
21, 22  
21, 22  
20  
Read RAM  
Read RAM  
Read RAM  
Read RAM  
Non-volatile STORE  
Read RAM  
I
CC2  
L
H
Active  
21, 22  
21, 22  
21, 22  
21, 22  
21, 22  
21  
Read RAM  
Read RAM  
Read RAM  
Read RAM  
Non-volatile RECALL  
NOTES  
21.  
The six consecutive addresses must be in order listed - (0000, 1555, 0AAA, 1FFF, 10F0, 0F0F) for a STORE cycle or  
(0000, 1555, 0AAA, 1FFF, 10F0, 0F0E) for a RECALL cycle. W (bar) must be high during all six consecutive cycles. See  
STORE CYCLE and RECALL CYCLE tables and diagrams for further details.  
22.  
I/O state assumes that G (bar) V . Activation of non-volatile cycles does not depend on the state of G (bar).  
IL  
STORE / RECALL CYCLES 1 AND 2 (See notes 24 and 29)  
P11C68-45  
P11C68-35  
Max.  
Symbol  
Parameter  
Units  
Notes  
Min.  
Max.  
Min.  
Alternative  
Standard  
ns  
ns  
Read cycle time  
Skew between sequentially  
adjacent addresses  
35  
45  
t
t
t
AVAV  
AXAV  
ACS  
5
23  
5
t
SKEW  
75  
10  
20  
ns  
ms  
µs  
ns  
ns  
ns  
25  
26  
26, 30  
27  
27  
27  
Address valid to output inactive  
Store cycle time  
Recall cycle time  
Address set-up to chip enable  
Chip enable pulse width  
Chip disable to address change  
75  
10  
20  
t
t
AVQZ  
ELQZ  
t
t
STORE  
RECALL  
0
35  
0
0
45  
0
t
t
AVEL  
ELEH  
AE  
t
t
t
EP  
t
EHAX  
EA  
NOTES  
23.  
Skew spec may be avoided by using E (bar) (STORE/RECALL CYCLE 2).  
24.  
W (bar) V during entire address sequence to initiate a non-volatile cycle.  
IH  
Required address sequences are shown in the Mode Selection table.  
25.  
26.  
Once the software STORE or RECALL cycle is initiated, it completes automatically, ignoring all inputs.  
Measured with W (bar) high, G (bar) low and E (bar) low. Note that STORE cycles (but not RECALLS) are aborted by Vcc  
< 3.3V (STORE Inhibit).  
27.  
28.  
29.  
E (bar) must make the transition between V (max) to V (max), or V (max) to V (min) in a monotonic fashion.  
Chip is continuously selected with E (bar) low.  
IH  
IL  
IL  
IH  
Addresses 1 through 6 are found in the Mode Selection table. Address 6 determines whether the P11C68 performs a  
STORE or RECALL. A RECALL cycle is performed automatically at power up when V exceeds 3.3V. V must not drop  
CC  
CC  
below 3.3V once it has exceeded it for the RECALL to function properly, t  
exceeds 3.3V.  
is measured from the point at which V  
RECALL  
CC  
30.  
Address transitions may not occur on any address pin during this time.  
12