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XQ4013E-3BG191N 参数 Datasheet PDF下载

XQ4013E-3BG191N图片预览
型号: XQ4013E-3BG191N
PDF下载: 下载PDF文件 查看货源
内容描述: QPRO XQ4000E / EX QML高可靠性的FPGA [QPRO XQ4000E/EX QML High-Reliability FPGAs]
分类和应用:
文件页数/大小: 36 页 / 300 K
品牌: XILINX [ XILINX, INC ]
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R
QPRO XQ4000E/EX QML High-Reliability FPGAs  
XQ4000E CLB Edge-Triggered (Synchronous) RAM Switching Characteristic Guidelines  
Testing of switching parameters is modeled after testing  
methods specified by MIL-M-38510/605. All devices are  
100% functionally tested. Internal timing parameters are  
derived from measuring internal test patterns. Listed below  
are representative values. For more specific, more precise,  
and worst-case guaranteed data, use the values reported  
by the static timing analyzer (TRCE in the Xilinx Develop-  
ment System) and back-annotated to the simulation netlist.  
All timing parameters assume worst-case operating condi-  
tions (supply voltage and junction temperature). Values  
apply to all XQ4000E/EX devices unless otherwise noted.  
Single-Port RAM Synchronous (Edge-Triggered) Write Operation Characteristics  
-3  
-4  
Symbol  
Write Operation Description  
Size  
16x2  
32x1  
16x2  
32x1  
16x2  
32x1  
16x2  
32x1  
16x2  
32x1  
16x2  
32x1  
16x2  
32x1  
16x2  
32x1  
16x2  
32x1  
Min  
14.4  
14.4  
7.2  
7.2  
2.4  
2.4  
0
Max  
Min  
15.0  
15.0  
7.5  
7.5  
2.8  
2.8  
0
Max  
Units  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
T
Address write cycle time (clock K period)  
-
-
WCS  
T
T
-
-
WCTS  
T
Clock K pulse width (active edge)  
Address setup time before clock K  
Address hold time after clock K  
1 ms  
1 ms  
WPS  
1 ms  
1 ms  
WPTS  
T
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ASS  
T
-
ASTS  
T
-
AHS  
T
0
0
-
AHTS  
T
D
D
setup time before clock K  
hold time after clock K  
3.2  
1.9  
0
3.5  
2.5  
0
-
DSS  
IN  
IN  
T
-
DSTS  
T
-
DHS  
T
0
0
-
DHTS  
T
WE setup time before clock K  
WE hold time after clock K  
Data valid after clock K  
2.0  
2.0  
0
2.2  
2.2  
0
-
WSS  
T
T
T
-
-
WSTS  
T
WHS  
0
0
-
WHTS  
T
8.8  
10.3  
-
10.3  
11.6  
WOS  
-
WOTS  
Notes:  
1. Timing for the 16x1 RAM option is identical to 16x2 RAM timing.  
2. Applicable Read timing specifications are identical to Level-Sensitive Read timing.  
Dual-Port RAM Synchronous (Edge-Triggered) Write Operation Characteristics  
-3  
-4  
(1)  
Symbol  
Write Operation Description  
Address write cycle time (clock K period)  
Clock K pulse width (active edge)  
Address setup time before clock K  
Address hold time after clock K  
Size  
16x1  
16x1  
16x1  
16x1  
16x1  
16x1  
16x1  
16x1  
16x1  
Min  
14.4  
7.2  
2.5  
0
Max  
Min  
15.0  
7.5  
2.8  
0
Max  
Units  
ns  
T
T
WCDS  
WPDS  
1 ms  
1 ms  
ns  
T
-
-
ns  
ASDS  
T
-
-
ns  
AHDS  
T
T
D
D
setup time before clock K  
hold time after clock K  
2.5  
0
-
2.2  
0
-
ns  
DSDS  
DHDS  
WSDS  
WHDS  
WODS  
IN  
IN  
-
-
-
ns  
T
T
T
WE setup time before clock K  
WE hold time after clock K  
Data valid after clock K  
1.8  
0
2.2  
0.3  
-
-
-
ns  
-
ns  
-
7.8  
10.0  
ns  
Notes:  
1. Applicable Read timing specifications are identical to Level-Sensitive Read timing.  
DS021 (v2.2) June 25, 2000  
www.xilinx.com  
9
Product Specification  
1-800-255-7778  
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