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WED3DL644V 参数 Datasheet PDF下载

WED3DL644V图片预览
型号: WED3DL644V
PDF下载: 下载PDF文件 查看货源
内容描述: SDRAM 4Mx64 [4Mx64 SDRAM]
分类和应用: 动态存储器
文件页数/大小: 28 页 / 919 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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WED3DL644V  
White Electronic Designs  
FIG. 8 PAGE WRITE CYCLE AT DIFFERENT BANK @BURST LENGTH=4  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
CLOCK  
HIGH  
CKE  
CE#  
RAS#  
Note 2  
CAS#  
ADDR  
RAa  
CAa  
RBb  
CBb  
CAc  
CBd  
BA  
A10/AP  
DQ  
RAa  
RBb  
tCDL  
tRDL  
DAa0 DAa1 DAa2 DAa3 DBb0 DBb1 DBb2 DBb3 DAc0 DAc1 DBd0 DBd1  
WE#  
Note 1  
DQM  
Row Active  
(A-Bank)  
Row Active  
(B-Bank)  
Write  
(B-Bank)  
Write  
(A-Bank)  
Write  
(B-Bank)  
Precharge  
(Both Banks)  
Write  
(A-Bank)  
DON'T CARE  
NOTES:  
1.  
2.  
To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.  
To interrupt burst write by Row precharge, both the write and the precharge banks must be the same.  
August 2005  
Rev. 6  
17  
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
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