VSC8115
Data Sheet
Table 6. LVTTL Inputs
Symbol
Parameter
Min
2.0
0
Typ
Max
Units
Condition
V
Input HIGH Voltage
Input LOW Voltage
Input HIGH Current
Input LOW Current
V
V
V
A
A
IH
IL
DD
V
0.8
50
50
I
I
–50
–50
V
V
= 2.75V, V = max.
DD
IH
IN
= 0.5V, V = max.
IL
IN
DD
Table 7. Power Supply Requirements
Symbol
Parameter
Min
Typ
57
Max
80
Units
mA
Condition
I
Power Supply Current from V
Power Dissipation
Outputs unterminated.
Outputs unterminated.
DD
DD
P
188.1
277
mW
D
\
Table 8. Recommended Operating Conditions
Symbol
Parameter
Min
Typ
+3.3
Max
Units
V
Power Supply Voltage
+3.135
+3.465
V
DD
(1)
T
Operating Temperature Range Under Bias
VSC8115YA, VSC8115YA-T
VSC8115YA-02
0
–40
–20
+70
+85
+85
°C
°C
°C
VSC8115YA-03
1. Lower limit of specification is ambient temperature and upper limit is case temperature.
Table 9. Absolute Maximum Ratings
Symbol
Parameter
Min
–0.5
–0.5
+50
–55
–65
Max
Units
V
Power Supply Voltage, Referenced to GND
DC Input Voltage (LVPECL, LVTTL)
Output Current (LVDS or LVPECL)
Case Temperature Under Bias
Storage Temperature
+4.0
V
V
DD
V
+ 0.5
DD
–50
+125
+150
750
T
T
°C
°C
V
C
S
V
ESD Voltage (Human Body Model)
ESD
Stresses listed under Absolute Maximum Ratings may be applied to devices one at a time without causing permanent damage. Functionality at or above the values
listed is not implied. Exposure to these values for extended periods may affect device reliability.
ELECTROSTATIC DISCHARGE
This device can be damaged by ESD. Vitesse recommends that all integrated circuits
be handled with appropriate precautions. Failure to observe proper handling and
installation procedures may adversely affect reliability of the device.
5 of 12
G52272, Rev 4.2
5/14/03
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
