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SIS438DN 参数 Datasheet PDF下载

SIS438DN图片预览
型号: SIS438DN
PDF下载: 下载PDF文件 查看货源
内容描述: N通道20 -V (D -S )的MOSFET [N-Channel 20-V (D-S) MOSFET]
分类和应用:
文件页数/大小: 13 页 / 580 K
品牌: VISHAY [ VISHAY ]
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New Product  
SiS438DN  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
1
Duty Cycle = 0.5  
0.2  
Notes:  
0.1  
0.1  
P
DM  
0.05  
t
1
t
2
t
t
1
2
0.02  
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 81 °C/W  
thJA  
(t)  
3. T - T = P  
Z
JM  
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
1
100  
1000  
10  
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Case  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see www.vishay.com/ppg?64826.  
www.vishay.com  
6
Document Number: 64826  
S09-0876-Rev. A, 18-May-09  
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