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SIS438DN 参数 Datasheet PDF下载

SIS438DN图片预览
型号: SIS438DN
PDF下载: 下载PDF文件 查看货源
内容描述: N通道20 -V (D -S )的MOSFET [N-Channel 20-V (D-S) MOSFET]
分类和应用:
文件页数/大小: 13 页 / 580 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
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New Product
SiS438DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1
Duty Cycle = 0.5
Normalized
Effective Transient
Thermal Impedance
0.2
0.1
0.05
Notes:
P
DM
t
1
0.1
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=
81
°C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
4. Surface Mounted
100
1000
Square
Wave
Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
Normalized
Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.02
Single Pulse
0.05
0.01
10
-4
10
-3
10
-2
10
-1
1
10
Square
Wave
Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?64826.
www.vishay.com
6
Document Number: 64826
S09-0876-Rev. A, 18-May-09