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SIS438DN 参数 Datasheet PDF下载

SIS438DN图片预览
型号: SIS438DN
PDF下载: 下载PDF文件 查看货源
内容描述: N通道20 -V (D -S )的MOSFET [N-Channel 20-V (D-S) MOSFET]
分类和应用:
文件页数/大小: 13 页 / 580 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
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New Product
SiS438DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
45
36
I
D
- Drain Current (A)
27
18
Package Limited
9
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
35
2.0
28
1.6
Power (W)
14
Power (W)
0
25
50
75
100
125
150
21
1.2
0.8
7
0.4
0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64826
S09-0876-Rev. A, 18-May-09
www.vishay.com
5