New Product
SiS438DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.05
0.04
0.03
0.02
0.01
0.00
T
J
= 150 °C
10
1
T
J
= 25 °C
0.1
0.01
T
J
= 125 °C
T
J
= 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.2
120
96
72
48
24
0
- 0.1
- 0.4
- 0.7
- 1.0
I
= 5 mA
D
I
= 250 µA
D
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (s)
T
J
- Temperature (°C)
Single Pulse Power (Junction-to-Ambient)
Threshold Voltage
100
Limited by R
*
DS(on)
10
1
1 ms
10 ms
100 ms
1 s
10 s
0.1
DC
T
= 25 °C
A
BVDSS Limited
Single Pulse
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 64826
S09-0876-Rev. A, 18-May-09
VISHAY [ VISHAY ]
