New Product
SiS438DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
V
GS
= 10
V
thru 4
V
32
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
24
V
GS
= 3
V
16
6
4
T
C
= 25 °C
2
T
C
= 125 °C
T
C
= - 55 °C
8
0
0.0
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.015
1200
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.013
C - Capacitance (pF)
960
V
GS
= 4.5
V
C
iss
0.011
720
0.009
V
GS
= 10
V
480
C
oss
240
C
rss
0.007
0.005
0
8
16
24
32
40
0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
I
D
= 10 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 10
V
R
DS(on)
- On-Resistance
1.5
1.7
I
D
= 10 A
Capacitance
6
(Normalized)
1.3
V
GS
= 10
V
V
DS
= 5
V
4
V
DS
= 15
V
2
1.1
V
GS
= 4.5
V
0.9
0
0.0
3.2
6.4
9.6
12.8
16.0
0.7
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 64826
S09-0876-Rev. A, 18-May-09
www.vishay.com
3
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