New Product
SiS438DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
10
8
V
GS
= 10 V thru 4 V
32
24
16
8
6
V
GS
= 3 V
4
T
C
= 25 °C
2
T
C
= 125 °C
1
T
C
= - 55 °C
3
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0
2
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.015
0.013
0.011
0.009
0.007
0.005
1200
960
720
480
240
0
C
iss
V
= 4.5 V
GS
V
= 10 V
GS
C
oss
C
rss
0
8
16
24
32
40
0
4
8
12
16
20
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current
Capacitance
10
8
1.7
1.5
1.3
1.1
0.9
0.7
I
= 10 A
I
= 10 A
D
D
V
= 10 V
DS
6
V
GS
= 10 V
V
DS
= 5 V
4
V
GS
= 4.5 V
V
= 15 V
DS
2
0
0.0
3.2
6.4
9.6
12.8
16.0
- 50 - 25
0
T
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
- Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 64826
S09-0876-Rev. A, 18-May-09
www.vishay.com
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