New Product
SiS438DN
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a, g
16
Definition
TrenchFET® Gen III Power MOSFET
100 % Rg Tested
0.0095 at VGS = 10 V
0.0125 at VGS = 4.5 V
•
•
20
7.3 nC
16
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
®
PowerPAK 1212-8
APPLICATIONS
S
•
•
DC/DC Conversion
POL
3.30 mm
3.30 mm
D
1
S
2
S
3
G
4
D
8
D
7
G
D
6
D
5
S
Bottom View
Ordering Information: SiS438DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Limit
20
Unit
V
20
16a, g
16g
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
14.3b, c
11.3b, c
32g
A
IDM
IAS
EAS
Pulsed Drain Current
Avalanche Current
Avalanche Energy
15
L = 0.1 mH
mJ
A
11.25
16a, g
2.9b, c
27.7
T
T
C = 25 °C
A = 25 °C
Continuous Source-Drain Diode Current
IS
TC = 25 °C
C = 70 °C
T
17.7
Maximum Power Dissipation
PD
W
3.5b, c
2.2b, c
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
RthJC
Typical
29
Maximum
Unit
t ≤ 10 s
Steady State
36
°C/W
3.6
4.5
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
g. Package limited.
Document Number: 64826
S09-0876-Rev. A, 18-May-09
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