UCD90320
ZHCSFI3B –AUGUST 2016–REVISED MAY 2019
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Electrical Characteristics (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
1
MAX
UNIT
MSPS
bits
ADC conversion rate (on each ADC
channel)(1)
FCONV
N
ADC resolution
12
Total unadjusted error, over full input
rangea when using internal reference
±10
±30
±4
ET
LSB
Total unadjusted error, over full input range
when using external reference
±2.5
DIGITAL INPUTS AND OUTPUTS (GPIO, Logic GPO, EN, AND MARGIN PINS)
0.65 ×
VV33D
VIH
VIL
I/O high-level input voltage(7)
5.5
V
V
0.35 ×
VV33D
I/O low-level input voltage
0
VHYS
VOH
VOL
IOH
I/O input hysteresis
0.2
2.4
V
V
I/O high-level output voltage
I/O low-level output voltage
High-level source current
Low-level sink current
0.4
2.6
V
VOH = 2.4 V(8)
VOL = 0.4 V(8)
4
4
mA
mA
IOL
RESET AND BROWNOUT
Minimum V33D slew rate between 2.8 V
and 3.2 V
V33DSlew
VRESET
0.1
2
V/ms
V
Supply voltage at which device comes out
of reset
2.3
Supply voltage at which device enters
brownout
VBOR
VSHDN
tRESET
tIRT
2.93
2.7
3.02
2.78
250
9
3.11
2.87
V
V
Supply voltage at which device shuts down
Minimum low-pulse width needed at
ns
ms
RESET
̅
pin
Internal reset time(9)
11.5
(7) PMBUS_CNTRL, PMBALERT, MARGIN19 and MARGIN20 pins have VV33D + 0.3 V as maximum input voltage rating.
(8) IO specifications reflect the maximum current where the corresponding output voltage meets the VOH/VOL thresholds.
(9) If power-loss or brown-out event occurs during an EEPROM program or erase operation, and EEPROM needs to be repaired (which is a
rare case), the internal reset time may be longer.
7.6 Non-Volatile Memory Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CONFIGURATION FLASH MEMORY
Number of program and erase
cycles before failure
PECYC
100,000
20
Cycles
Years
TRET
Data retention
–40°C ≤ TJ ≤ 85°C
FAULT AND EVENT LOGGING EEPROM
Number of mass program and erase
EPECYC
500,000
20
Cycles
Years
cycles of a single word before failure
ETRET
Data retention
–40°C ≤ TJ ≤ 85°C
10
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