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MSP430F5310 参数 Datasheet PDF下载

MSP430F5310图片预览
型号: MSP430F5310
PDF下载: 下载PDF文件 查看货源
内容描述: 混合信号微控制器 [MIXED SIGNAL MICROCONTROLLER]
分类和应用: 微控制器
文件页数/大小: 99 页 / 1242 K
品牌: TI [ TEXAS INSTRUMENTS ]
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MSP430F530x, MSP430F5310  
www.ti.com  
SLAS677B SEPTEMBER 2010REVISED MARCH 2011  
LDO-PWR (LDO Power System)  
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
VCC  
MIN  
TYP  
MAX UNIT  
VLAUNCH  
VLDOI  
LDO input detection threshold  
LDO input voltage  
3.75  
5.5  
V
V
V
3.76  
VLDO  
LDO output voltage  
3.3  
±9%  
LDOO terminal input voltage with  
LDO disabled.  
VLDO_EXT  
ILDOO  
LDO disabled.  
1.8  
60  
3.6  
20  
V
Maximum external current from  
LDOO terminal.  
LDO is on.  
mA  
mA  
µF  
nF  
LDO current overload detection  
IDET  
100  
(1)  
LDOI terminal recommended  
capacitance  
CLDOI  
4.7  
LDOO terminal recommended  
capacitance  
CLDOO  
tENABLE  
220  
Within 2%. Recommended  
capacitances.  
Settling time VLDO  
.
2
ms  
(1) A current overload will be detected when the total current supplied from the LDO exceeds this value.  
Flash Memory  
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)  
TEST  
CONDITIONS  
PARAMETER  
MIN  
TYP  
MAX UNIT  
DVCC(PGM/ERASE) Program and erase supply voltage  
1.8  
3.6  
200  
5
V
ns  
tREADMARGIN  
IPGM  
Read access time during margin mode  
Supply current from DVCC during program  
Supply current from DVCC during erase  
Supply current from DVCC during mass erase or bank erase  
Cumulative program time  
3
2
mA  
mA  
mA  
ms  
IERASE  
6.5  
2.5  
16  
IMERASE, IBANK  
tCPT  
(1)  
See  
Program/erase endurance  
104  
100  
64  
105  
cycles  
years  
µs  
tRetention  
tWord  
Data retention duration  
TJ = 25°C  
(2)  
Word or byte program time  
See  
85  
65  
(2)  
tBlock, 0  
Block program time for first byte or word  
See  
49  
µs  
Block program time for each additional byte or word, except for last  
byte or word  
(2)  
tBlock, 1(N1)  
tBlock, N  
See  
37  
55  
23  
49  
73  
32  
µs  
µs  
(2)  
Block program time for last byte or word  
See  
Erase time for segment, mass erase, and bank erase when  
available.  
(2)  
tErase  
See  
ms  
(1) The cumulative program time must not be exceeded when writing to a 128-byte flash block. This parameter applies to all programming  
methods: individual word/byte write and block write modes.  
(2) These values are hardwired into the flash controller's state machine.  
Copyright © 20102011, Texas Instruments Incorporated  
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