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BQ76925 参数 Datasheet PDF下载

BQ76925图片预览
型号: BQ76925
PDF下载: 下载PDF文件 查看货源
内容描述: 主机控制模拟前端用于3至6节锂离子/聚合物电池 [Host Controlled Analog Front End for 3 to 6 Series Cell Lithium-Ion/ Polymer Battery]
分类和应用: 电池
文件页数/大小: 29 页 / 742 K
品牌: TI [ TEXAS INSTRUMENTS ]
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bq76925  
SLUSAM9A JULY 2011REVISED JULY 2011  
www.ti.com  
The SLEEP_DIS bit in the POWER_CTL register acts as an override to the sleep function. When SLEEP_DIS is  
set to 1, writing the SLEEP bit has no effect (i.e. sleep mode cannot be entered). If SLEEP_DIS is set after  
sleep mode has been entered, the device will immediately exit sleep mode. This scenario can arise if  
SLEEP_DIS is set after SLEEP is set, but before V3P3 has discharged below a valid operating voltage. This  
scenario can also occur if the V3P3 pin is held up by external circuitry and not allowed to fully discharge.  
If the over-current alert function is not used, the ALERT pin can function as a dedicated wake-up pin. Otherwise,  
the ALERT pin will normally be pulled up to the LDO voltage, so care must be taken in the system design so that  
the wake-up signal does not interfere with proper operation of the regulator.  
Internal LDO Voltage Regulator  
The bq76925 provides a regulated 3.3 V supply voltage on the V3P3 pin for operating the devices internal logic  
and interface circuitry. This regulator may also be used to directly power an external microcontroller or other  
external circuitry up to a limit of 4 mA load current. In this configuration, the VCTL pin is tied directly to the BAT  
pin. For applications requiring more than 4 mA, an external bypass transistor may be used to supply the load  
current. In this configuration the VCTL pin is tied to the gate of the bypass FET. These two configurations are  
show in Figure 4.  
PACK+  
PACK+  
3.3 V  
RVCTL  
BAT  
RBAT  
CBAT  
RBAT  
BAT  
VCTL  
V3P3  
VCTL  
V3P3  
VREG  
VREG  
CBAT  
CV3P3  
CV3P3  
bq76925  
bq76925  
a) Regulator load supplied through bq76925  
b) Regulator load supplied through external  
pass device  
Figure 4. LDO Regulator Configurations  
For the configuration of Figure 4B), a high gain bypass device should be used to ensure stability. A bipolar PNP  
or p-channel FET bypass device may be used. Contact TI for recommendations.  
The LDO regulator may be overridden (i.e., back-fed) by an external supply voltage greater than the regulated  
voltage on V3P3. In this configuration the bq76925 internal logic and interface circuitry will operate from the  
external supply and the internal 3.3 V regulator will supply no load current.  
ADC Interface  
The bq76925 is designed to interface to a multi-channel analog-to-digital converter (ADC) located in an external  
Host controller, such as an MSP430 Microcontroller or equivalent. Three outputs provide voltage, current and  
temperature information for measurement by the Host. In addition, the bq76925 includes a low-drift calibrated 1.5  
/ 3 V reference that is output on a dedicated pin for use as the reference input to the ADC.  
The gain and offset characteristics of the bq76925 are measured during factory test and stored in non-volatile  
memory as correction factors. The Host reads these correction factors and applies them to the ADC conversion  
results in order to achieve high measurement accuracy. In addition, the precise voltage reference of the bq76925  
can be used to calibrate out the gain and offset of the Host ADC.  
Reference Voltage  
The bq76925 outputs a stable reference voltage for use by the Host ADC. A nominal voltage of 1.5 V or 3 V is  
selected via the REF_SEL bit in the CONFIG_2 register. The reference voltage is very stable across  
temperature, but the initial voltage may vary by ±4%. The variation from nominal is manifested as a gain error in  
the ADC conversion result. To correct for this error, offset and gain correction factors are determined at final test  
and stored in the non-volatile registers VREF_CAL and VREF_CAL_EXT. The Host reads the correction factors  
and applies them to the nominal reference voltage to arrive at the actual reference voltage as described under  
Cell Voltage Monitoring. After gain correction, the tolerance of the reference will be within ±0.1%.  
12  
Copyright © 2011, Texas Instruments Incorporated  
 
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