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UPSD3412C-24U6T 参数 Datasheet PDF下载

UPSD3412C-24U6T图片预览
型号: UPSD3412C-24U6T
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存可编程系统设备与8032单片机内核和16Kbit的SRAM [Flash Programmable System Devices with 8032 Microcontroller Core and 16Kbit SRAM]
分类和应用: 闪存静态存储器微控制器
文件页数/大小: 152 页 / 1492 K
品牌: STMICROELECTRONICS [ ST ]
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UPSD3212C, UPSD3212CV  
SRAM  
The SRAM is enabled when SRAM Select (RS0)  
from the DPLD is High. SRAM Select (RS0) can  
contain up to two product terms, allowing flexible  
memory mapping.  
The SRAM can be backed up using an external  
battery. The external battery should be connected  
lap, priority is given to the secondary Flash  
memory sector.  
6. SRAM, I/O, and Peripheral I/O spaces may  
overlap any other memory sector. Priority is giv-  
en to the SRAM, I/O, or Peripheral I/O.  
Example. FS0 is valid when the address is in the  
range of 8000h to BFFFh, CSBOOT0 is valid from  
8000h to 9FFFh, and RS0 is valid from 8000h to  
87FFh. Any address in the range of RS0 always  
accesses the SRAM. Any address in the range of  
CSBOOT0 greater than 87FFh (and less than  
9FFFh) automatically addresses secondary Flash  
memory segment 0. Any address greater than  
9FFFh accesses the primary Flash memory seg-  
ment 0. You can see that half of the primary Flash  
memory segment 0 and one-fourth of secondary  
Flash memory segment 0 cannot be accessed in  
this example.  
to Voltage Standby (V  
, PC2). If you have an  
STBY  
external battery connected to the uPSD3200, the  
contents of the SRAM are retained in the event of  
a power loss. The contents of the SRAM are re-  
tained so long as the battery voltage remains at 2V  
or greater. If the supply voltage falls below the bat-  
tery voltage, an internal power switchover to the  
battery occurs.  
PC4 can be configured as an output that indicates  
when power is being drawn from the external bat-  
tery. Battery-on Indicator (V  
, PC4) is High  
BATON  
with the supply voltage falls below the battery volt-  
age and the battery on Voltage Standby (V  
PC2) is supplying power to the internal SRAM.  
,
STBY  
Note: An equation that defined FS1 to anywhere  
in the range of 8000h to BFFFh would not be valid.  
SRAM Select (RS0), Voltage Standby (V  
,
STBY  
Figure 44 shows the priority levels for all memory  
components. Any component on a higher level can  
overlap and has priority over any component on a  
lower level. Components on the same level must  
not overlap. Level one has the highest priority and  
level 3 has the lowest.  
PC2) and Battery-on Indicator (V  
, PC4) are  
BATON  
all configured using PSDsoft Express Configura-  
tion.  
Sector Select and SRAM Select  
Sector Select (FS0-FS3, CSBOOT0-CSBOOT1)  
and SRAM Select (RS0) are all outputs of the  
DPLD. They are setup by writing equations for  
them in PSDsoft Express. The following rules ap-  
ply to the equations for these signals:  
Figure 44. Priority Level of Memory and I/O  
Components in the PSD MODULE  
1. Primary Flash memory and secondary Flash  
memory Sector Select signals must not be larg-  
er than the physical sector size.  
2. Any primary Flash memory sector must not be  
mapped in the same memory space as another  
Flash memory sector.  
3. A secondary Flash memory sector must not be  
mapped in the same memory space as another  
secondary Flash memory sector.  
4. SRAM, I/O, and Peripheral I/O spaces must not  
overlap.  
Highest Priority  
Level 1  
SRAM, I/O, or  
Peripheral I/O  
Level 2  
Secondary  
Non-Volatile Memory  
Level 3  
Primary Flash Memory  
Lowest Priority  
AI02867D  
5. A secondary Flash memory sector may overlap  
a primary Flash memory sector. In case of over-  
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