UPSD3212C, UPSD3212CV
Table 106. Program, WRITE and Erase Times (5V Devices)
Symbol
Parameter
Min.
Typ.
8.5
3
Max.
30
Unit
Flash Program
s
(1)
s
Flash Bulk Erase (pre-programmed)
Flash Bulk Erase (not pre-programmed)
Sector Erase (pre-programmed)
Sector Erase (not pre-programmed)
Byte Program
5
s
s
t
t
t
1
30
WHQV3
WHQV2
WHQV1
2.2
14
s
150
µs
Program / Erase Cycles (per Sector)
Sector Erase Time-out
100,000
cycles
µs
t
t
100
WHWLO
Q7VQV
(2)
30
ns
DQ7 Valid to Output (DQ7-DQ0) Valid (Data Polling)
Note: 1. Programmed to all zero before erase.
2. The polling status, DQ7, is valid t
time units before the data byte, DQ0-DQ7, is valid for reading.
Q7VQV
Table 107. Program, WRITE and Erase Times (3V Devices)
Symbol
Parameter
Min.
Typ.
8.5
3
Max.
30
Unit
Flash Program
s
(1)
s
s
Flash Bulk Erase (pre-programmed)
Flash Bulk Erase (not pre-programmed)
Sector Erase (pre-programmed)
Sector Erase (not pre-programmed)
Byte Program
5
t
t
t
1
30
s
WHQV3
WHQV2
WHQV1
2.2
14
s
150
µs
cycles
µs
ns
Program / Erase Cycles (per Sector)
Sector Erase Time-out
100,000
t
t
100
WHWLO
Q7VQV
(2)
30
DQ7 Valid to Output (DQ7-DQ0) Valid (Data Polling)
Note: 1. Programmed to all zero before erase.
2. The polling status, DQ7, is valid t
time units before the data byte, DQ0-DQ7, is valid for reading.
Q7VQV
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STMICROELECTRONICS [ ST ]
