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STM32F105RBT6 参数 Datasheet PDF下载

STM32F105RBT6图片预览
型号: STM32F105RBT6
PDF下载: 下载PDF文件 查看货源
内容描述: [Mainstream Connectivity line, ARM Cortex-M3 MCU with 128 Kbytes Flash, 72 MHz CPU, CAN, USB 2.0 OTG]
分类和应用: 以太网通信
文件页数/大小: 95 页 / 1009 K
品牌: STMICROELECTRONICS [ ST ]
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STM32F105xx, STM32F107xx  
Electrical characteristics  
Table 51. ADC characteristics (continued)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
fADC = 14 MHz  
0.214  
3(4)  
µs  
1/fADC  
µs  
(2)  
tlat  
Injection trigger conversion latency  
fADC = 14 MHz  
fADC = 14 MHz  
0.143  
2(4)  
(2)  
tlatr  
Regular trigger conversion latency  
1/fADC  
µs  
0.107  
1.5  
0
17.1  
239.5  
1
(2)  
tS  
Sampling time  
Power-up time  
1/fADC  
µs  
(2)  
tSTAB  
0
fADC = 14 MHz  
1
18  
µs  
Total conversion time (including  
sampling time)  
(2)  
tCONV  
14 to 252 (tS for sampling +12.5 for  
successive approximation)  
1/fADC  
1. Based on characterization, not tested in production.  
2. Guaranteed by design, not tested in production.  
3. VREF+ is internally connected to VDDA and VREF- is internally connected to VSSA  
.
4. For external triggers, a delay of 1/fPCLK2 must be added to the latency specified in Table 51.  
Equation 1: R  
max formula  
TS  
AIN  
RAIN > -------------------------------------------------------------- – RADC  
fADC · CADC · ln*2N + 2  
+
The formula above (Equation 1) is used to determine the maximum external impedance allowed for an  
error below 1/4 of LSB. Here N = 12 (from 12-bit resolution).  
(1)  
Table 52.  
R
max for f  
= 14 MHz  
AIN  
ADC  
Ts (cycles)  
tS (µs)  
RAIN max (kY)  
1.5  
0.11  
0.4  
7.5  
0.54  
0.96  
2.04  
2.96  
3.96  
5.11  
17.1  
5.9  
13.5  
28.5  
41.5  
55.5  
71.5  
239.5  
11.4  
25.2  
37.2  
50  
NA  
NA  
1. Based on characterization, not tested in production.  
Doc ID 15274 Rev 4  
69/95  
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