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STM32F405RG 参数 Datasheet PDF下载

STM32F405RG图片预览
型号: STM32F405RG
PDF下载: 下载PDF文件 查看货源
内容描述: ARM的Cortex- M4 32B MCUFPU , 210DMIPS ,高达1MB闪存/ 1924KB RAM , USB OTG HS / FS [ARM Cortex-M4 32b MCUFPU, 210DMIPS, up to 1MB Flash/1924KB RAM, USB OTG HS/FS]
分类和应用: 闪存
文件页数/大小: 185 页 / 5432 K
品牌: STMICROELECTRONICS [ ST ]
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STM32F405xx, STM32F407xx  
Description  
The following conditions must be respected:  
V
should always be higher than V  
and V  
to avoid current injection  
CAP_2  
DD  
CAP_1  
between power domains.  
If the time for V and V  
to reach V minimum value is faster than the time for  
CAP_1  
CAP_2  
12  
V
to reach 1.8 V, then PA0 should be kept low to cover both conditions: until V  
DD  
CAP_1  
and V  
reach V minimum value and until V reaches 1.8 V (see Figure 10).  
12 DD  
CAP_2  
Otherwise, if the time for V  
and V  
to reach V minimum value is slower  
CAP_2 12  
CAP_1  
than the time for V to reach 1.8 V, then PA0 could be asserted low externally (see  
DD  
Figure 11).  
If V  
and V  
go below V minimum value and V is higher than 1.8 V, then  
CAP_1  
CAP_2 12 DD  
a reset must be asserted on PA0 pin.  
Note:  
The minimum value of V depends on the maximum frequency targeted in the application  
12  
(see Table 14: General operating conditions).  
Figure 10. Startup in regulator OFF mode: slow V slope  
DD  
- power-down reset risen after V  
/V  
stabilization  
CAP_1 CAP_2  
VDD  
PDR = 1.7 V or 1.8 V (2)  
VCAP_1/VCAP_2  
V12  
Min V12  
time  
NRST  
ai18491e  
time  
1. This figure is valid both whatever the internal reset mode (onON or OFFoff).  
2. PDR = 1.7 V for reduced temperature range; PDR = 1.8 V for all temperature ranges.  
DocID022152 Rev 4  
27/185  
 
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