NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Table 18. DC Characteristics, 1.8V Devices
Symbol
Parameter
Test Conditions
minimum
Min
Typ
Max
Unit
t
Sequential
Read
RLRL
I
-
8
15
mA
DD1
E=V
I
= 0 mA
IL, OUT
Operating
Current
I
Program
Erase
-
-
-
-
8
8
15
15
mA
mA
DD2
I
DD3
Stand-By Current (CMOS)
128Mb, 256Mb, 512Mb devices
-
-
10
20
50
µA
µA
E=V -0.2,
DD
I
DD5
WP=0/V
DD
Stand-By Current (CMOS)
512Mb and 1Gb Dual Die devices
100
I
V = 0 to V max
IN DD
Input Leakage Current
Output Leakage Current
Input High Voltage
-
-
-
-
±10
±10
µA
µA
V
LI
I
V
OUT
= 0 to V max
LO
DD
V
V
V
-0.4
DD
V
+0.3
DD
-
-
IH
V
Input Low Voltage
-
-0.3
-
0.4
V
IL
V
OH
I
I
= -100µA
-0.1
DD
Output High Voltage Level
Output Low Voltage Level
Output Low Current (RB)
-
-
V
OH
V
OL
= 100µA
V = 0.2V
OL
-
-
0.1
V
OL
I
(RB)
3
-
4
mA
OL
V
Supply Voltage (Erase and
Program lockout)
DD
V
-
-
1.5
V
LKO
35/57
STMICROELECTRONICS [ ST ]
