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NAND256R4A0AZA6F 参数 Datasheet PDF下载

NAND256R4A0AZA6F图片预览
型号: NAND256R4A0AZA6F
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆, 256兆, 512兆, 1千兆( X8 / X16 ), 528字节/字264页, 1.8V / 3V , NAND闪存 [128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 57 页 / 916 K
品牌: STMICROELECTRONICS [ ST ]
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A  
Hardware Simulation Models  
ior of the I/O buffers and electrical characteristics  
of Flash devices.  
Behavioral simulation models. Denali Software  
Corporation models are platform independent  
functional models designed to assist customers in  
performing entire system simulations (typical  
VHDL/Verilog). These models describe the logic  
behavior and timings of NAND Flash devices, and  
so allow software to be developed before hard-  
ware.  
These models provide information such as AC  
characteristics, rise/fall times and package me-  
chanical data, all of which are measured or simu-  
lated at voltage and temperature ranges wider  
than those allowed by target specifications.  
IBIS models are used to simulate PCB connec-  
tions and can be used to resolve compatibility is-  
sues when upgrading devices. They can be  
imported into SPICETOOLS.  
IBIS simulations models. IBIS (I/O Buffer Infor-  
mation Specification) models describe the behav-  
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