NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Table 20. AC Characteristics for Command, Address, Data Input
Alt.
Symbol
1.8V
3V
Symbol
Parameter
Unit
Devices Devices
t
Address Latch Low to Write Enable Low
Address Latch High to Write Enable Low
Command Latch High to Write Enable Low
Command Latch Low to Write Enable Low
Data Valid to Write Enable High
ALLWL
t
AL Setup time
CL Setup time
Min
Min
0
0
0
0
ns
ALS
t
ALHWL
t
CLHWL
t
ns
CLS
t
CLLWL
t
t
Data Setup time Min
20
0
20
0
ns
ns
DVWH
DS
t
t
Chip Enable Low to Write Enable Low
Write Enable High to Address Latch High
Write Enable High to Address Latch Low
Write Enable High to Command Latch High
Write Enable High to Command Latch Low
Write Enable High to Data Transition
Write Enable High to Chip Enable High
E Setup time
Min
ELWL
CS
t
WHALH
t
AL Hold time
Min
10
10
10
10
ns
ns
ALH
t
WHALL
t
WHCLH
t
CL hold time
Min
CLH
t
WHCLL
t
t
Data Hold time
E Hold time
Min
Min
10
10
10
10
ns
ns
WHDX
DH
t
t
WHEH
CH
W High Hold
time
t
t
Write Enable High to Write Enable Low
Min
Min
20
15
ns
WHWL
WH
(1)
t
t
Write Enable Low to Write Enable High
Write Enable Low to Write Enable Low
W Pulse Width
40
60
ns
ns
WLWH
WP
25
50
t
t
Write Cycle time Min
WLWL
WC
Note: 1. If tELWL is less than 10ns, tWLWH must be minimum 35ns, otherwise, tWLWH may be minimum 25ns.
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STMICROELECTRONICS [ ST ]
