NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Table 21. AC Characteristics for Operations
Alt.
1.8V
3V
Symbol
Parameter
Unit
Symbol
Devices Devices
t
Read Electronic Signature
Read cycle
Min
Min
Min
10
10
20
10
10
20
ns
ns
ns
ALLRL1
Address Latch Low to
Read Enable Low
t
AR
t
ALLRL2
t
t
Ready/Busy High to Read Enable Low
Read Busy time, 128Mb, 256Mb,
BHRL
RR
Max
12
12
µs
512Mb Dual Die
t
BLBH1
Read Busy time, 512Mb, 1Gb
Program Busy time
Max
Max
Max
Max
Max
Max
Max
Min
15
500
3
12
500
3
µs
µs
ms
µs
µs
µs
µs
ns
ns
Ready/Busy Low to
Ready/Busy High
t
t
t
t
PROG
BLBH2
BLBH3
BLBH4
t
Erase Busy time
BERS
Reset Busy time, during ready
Reset Busy time, during read
Reset Busy time, during program
Reset Busy time, during erase
5
5
5
5
Write Enable High to
Ready/Busy High
t
t
10
500
10
0
10
500
10
0
WHBH1
RST
t
t
Command Latch Low to Read Enable Low
Data Hi-Z to Read Enable Low
CLLRL
CLR
t
t
Min
DZRL
EHBH
IR
(1)
(1)
t
t
Chip Enable High to Ready/Busy High (E intercepted read)
Max
ns
60 + t
60 + t
CRY
r
r
(2)
t
t
Min
Max
Max
Max
100
20
100
20
ns
ns
ns
ns
EHEL
CEH
Chip Enable High to Chip Enable Low
t
t
Chip Enable High to Output Hi-Z
Chip Enable Low to Output Valid
Read Enable High to Ready/Busy Low
EHQZ
CHZ
t
t
t
45
45
ELQV
CEA
t
RB
100
100
RHBL
Read Enable High to
Read Enable High Hold time
Read Enable Low
t
t
Min
15
15
ns
ns
RHRL
REH
Min
15
30
15
30
t
t
Read Enable High to Output Hi-Z
RHQZ
RHZ
Max
Read Enable Low to
Read Enable Pulse Width
Read Enable High
t
t
Min
Min
30
60
30
50
ns
ns
RLRH
RP
Read Enable Low to
Read Cycle time
Read Enable Low
t
t
RLRL
RC
Read Enable Access time
Read Enable Low to
t
t
Max
Max
35
12
35
12
ns
µs
RLQV
REA
Output Valid
(3)
Read ES Access time
Read Busy time, 128Mb, 256Mb,
512Mb Dual Die
Write Enable High to
Ready/Busy High
t
t
R
WHBH
Read Busy time, 512Mb, 1Gb
Max
Max
Min
15
100
80
12
100
60
µs
ns
ns
t
t
WB
Write Enable High to Ready/Busy Low
Write Enable High to Read Enable Low
WHBL
t
t
t
WHR
WHRL
Write Enable Low to
Write Cycle time
Write Enable Low
t
Min
60
50
ns
WLWL
WC
Note: 1. The time to Ready depends on the value of the pull-up resistor tied to the Ready/Busy pin. See Figures 34, 35 and 36.
2. To break the sequential read cycle, E must be held High for longer than tEHEL
3. ES = Electronic Signature.
.
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STMICROELECTRONICS [ ST ]
