NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Table 19. DC Characteristics, 3V Devices
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
t
minimum
Sequential
Read
RLRL
I
-
10
20
mA
DD1
E=V
I
= 0 mA
IL, OUT
Operating
Current
I
Program
Erase
-
-
-
-
10
10
20
20
mA
mA
DD2
I
DD3
Stand-by Current (TTL),
128Mb, 256Mb, 512Mb devices
-
-
-
-
-
1
2
mA
mA
µA
I
I
E=V , WP=0V/V
IH DD
DD4
DD5
Stand-by Current (TTL)
512Mb and 1Gb Dual Die devices
-
Stand-By Current (CMOS)
128Mb, 256Mb, 512Mb devices
10
20
50
100
E=V -0.2,
DD
WP=0/V
DD
Stand-By Current (CMOS)
512Mb and 1Gb Dual Die devices
µA
I
V = 0 to V max
IN DD
Input Leakage Current
Output Leakage Current
Input High Voltage
-
-
-
-
±10
±10
µA
µA
V
LI
I
V
OUT
= 0 to V max
LO
DD
V
V
+0.3
DD
-
2.0
−0.3
2.4
-
-
IH
V
Input Low Voltage
-
-
0.8
V
IL
V
OH
I
I
= −400µA
Output High Voltage Level
Output Low Voltage Level
Output Low Current (RB)
-
-
V
OH
V
OL
= 2.1mA
V = 0.4V
OL
-
0.4
V
OL
I
(RB)
8
10
mA
OL
V
Supply Voltage (Erase and
Program lockout)
DD
V
-
-
-
2.5
V
LKO
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